IRFR6215 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR6215

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.295 Ohm

Encapsulados: TO252

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IRFR6215 datasheet

 ..1. Size:141K  international rectifier
 irfr6215.pdf pdf_icon

IRFR6215

PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel D 175 C Operating Temperature VDSS = -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215) RDS(on) = 0.295 Advanced Process Technology G Fast Switching ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

 ..2. Size:241K  international rectifier
 irfr6215pbf irfu6215pbf.pdf pdf_icon

IRFR6215

PD-95080A IRFR6215PbF IRFU6215PbF HEXFET Power MOSFET l P-Channel l 175 C Operating Temperature D l Surface Mount (IRFR6215) VDSS = -150V l Straight Lead (IRFU6215) l Advanced Process Technology RDS(on) = 0.295 l Fast Switching G l Fully Avalanche Rated ID = -13A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

 ..3. Size:648K  infineon
 irfr6215pbf irfu6215pbf.pdf pdf_icon

IRFR6215

IRFR6215PbF IRFU6215PbF HEXFET Power MOSFET P-Channel 175 C Operating Temperature VDSS -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215) RDS(on) 0.295 Advanced Process Technology Fast Switching ID -13A Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFETs from International Rectifier utilize advan

 0.1. Size:265K  international rectifier
 auirfr6215tr.pdf pdf_icon

IRFR6215

PD-96302A AUTOMOTIVE GRADE AUIRFR6215 HEXFET Power MOSFET Features P-Channel D V(BR)DSS -150V Low On-Resistance Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.295 G Fast Switching Fully Avalanche Rated S ID -13A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

MOSTRAR MÁS

Otros transistores... IRFR410, IRFR4105, IRFR411, IRFR420, IRFR420A, IRFR5305, IRFR5410, IRFR5505, 12N60, IRFR9010, IRFR9012, IRFR9014, IRFR9020, IRFR9022, IRFR9024, IRFR9024N, IRFR9110