IRFR6215 Todos los transistores

 

IRFR6215 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR6215
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 110 W
   Voltaje máximo drenador - fuente |Vds|: 150 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 13 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 66(max) nC
   Tiempo de subida (tr): 36 nS
   Conductancia de drenaje-sustrato (Cd): 220 pF
   Resistencia entre drenaje y fuente RDS(on): 0.295 Ohm
   Paquete / Cubierta: TO252

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IRFR6215 Datasheet (PDF)

 ..1. Size:141K  international rectifier
irfr6215.pdf

IRFR6215 IRFR6215

PD - 91749IRFR/U6215PRELIMINARYHEXFET Power MOSFET P-ChannelD 175C Operating TemperatureVDSS = -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215)RDS(on) = 0.295 Advanced Process TechnologyG Fast SwitchingID = -13A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie

 ..2. Size:241K  international rectifier
irfr6215pbf irfu6215pbf.pdf

IRFR6215 IRFR6215

PD-95080AIRFR6215PbFIRFU6215PbFHEXFET Power MOSFETl P-Channell 175C Operating TemperatureDl Surface Mount (IRFR6215)VDSS = -150Vl Straight Lead (IRFU6215)l Advanced Process TechnologyRDS(on) = 0.295l Fast SwitchingGl Fully Avalanche RatedID = -13Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 ..3. Size:648K  infineon
irfr6215pbf irfu6215pbf.pdf

IRFR6215 IRFR6215

IRFR6215PbF IRFU6215PbF HEXFET Power MOSFET P-Channel 175C Operating Temperature VDSS -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215) RDS(on) 0.295 Advanced Process Technology Fast Switching ID -13A Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFETs from International Rectifier utilize advan

 0.1. Size:265K  international rectifier
auirfr6215tr.pdf

IRFR6215 IRFR6215

PD-96302AAUTOMOTIVE GRADEAUIRFR6215HEXFET Power MOSFETFeatures P-ChannelDV(BR)DSS -150V Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.295G Fast Switching Fully Avalanche RatedSID -13A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed fo

 0.2. Size:483K  infineon
auirfr6215.pdf

IRFR6215 IRFR6215

AUTOMOTIVE GRADE AUIRFR6215 Features VDSS -150V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.295 P-Channel ID -13A Dynamic dv/dt Rating 175C Operating Temperature Fast Switching D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S Automotive Qualified * G D

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTD2955G

 

 
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History: NTD2955G

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
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