Справочник MOSFET. IRFR6215

 

IRFR6215 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR6215
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 66(max) nC
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.295 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRFR6215

 

 

IRFR6215 Datasheet (PDF)

 ..1. Size:141K  international rectifier
irfr6215.pdf

IRFR6215
IRFR6215

PD - 91749IRFR/U6215PRELIMINARYHEXFET Power MOSFET P-ChannelD 175C Operating TemperatureVDSS = -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215)RDS(on) = 0.295 Advanced Process TechnologyG Fast SwitchingID = -13A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie

 ..2. Size:241K  international rectifier
irfr6215pbf irfu6215pbf.pdf

IRFR6215
IRFR6215

PD-95080AIRFR6215PbFIRFU6215PbFHEXFET Power MOSFETl P-Channell 175C Operating TemperatureDl Surface Mount (IRFR6215)VDSS = -150Vl Straight Lead (IRFU6215)l Advanced Process TechnologyRDS(on) = 0.295l Fast SwitchingGl Fully Avalanche RatedID = -13Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 ..3. Size:648K  infineon
irfr6215pbf irfu6215pbf.pdf

IRFR6215
IRFR6215

IRFR6215PbF IRFU6215PbF HEXFET Power MOSFET P-Channel 175C Operating Temperature VDSS -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215) RDS(on) 0.295 Advanced Process Technology Fast Switching ID -13A Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFETs from International Rectifier utilize advan

 0.1. Size:265K  international rectifier
auirfr6215tr.pdf

IRFR6215
IRFR6215

PD-96302AAUTOMOTIVE GRADEAUIRFR6215HEXFET Power MOSFETFeatures P-ChannelDV(BR)DSS -150V Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature RDS(on) max.0.295G Fast Switching Fully Avalanche RatedSID -13A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed fo

 0.2. Size:483K  infineon
auirfr6215.pdf

IRFR6215
IRFR6215

AUTOMOTIVE GRADE AUIRFR6215 Features VDSS -150V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.295 P-Channel ID -13A Dynamic dv/dt Rating 175C Operating Temperature Fast Switching D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S Automotive Qualified * G D

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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