SI1021R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI1021R
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 10 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: SOT-416
Búsqueda de reemplazo de MOSFET SI1021R
SI1021R Datasheet (PDF)
si1021r.pdf
Si1021RVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA)Definition- 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.)
si1024x.pdf
Si1024XVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated0.85 at VGS = 2.5 V Very Small Footprint20 500 High-Side Switching1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7 Low
si1023x.pdf
Si1023XVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition1.2 at VGS = - 4.5 V - 350 TrenchFET Power MOSFET: 1.8 V Rated Very Small Footprint1.6 at VGS = - 2.5 V - 300- 20 High-Side Switching2.7 at VGS = - 1.8 V - 150 Low On-Resistance: 1.2
si1026x.pdf
Si1026XVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA)Definition1.40 at VGS = 10 V 60 1 to 2.5 500 Low On-Resistance: 1.40 Low Threshold: 2 V (typ.) Low Input Capacitance: 30 pF Fast Switching Speed: 15 ns (typ.) Low Input and Output
si1023cx.pdf
Si1023CXVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET0.756 at VGS = - 4.5 V - 0.35 100 % Rg Tested1.038 at VGS = - 2.5 V - 0.35- 20 1 nC Typical ESD protection: 1000 V (HBM)1.44 at VGS = - 1.8 V - 0.1 Fast Sw
si1028x.pdf
Si1028XVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) ESD Protected: 550 V Typical HBM0.650 at VGS = 10 V 0.48 Material categorization:30 0.5For definitions of compliance please see0.770 at VGS = 4.5 V 0.45www.vishay.com/doc?99912BENEFITS Low Offset Voltage
si1029x.pdf
Si1029XVishay SiliconixComplementary N- and P-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (mA)Definition1.40 at VGS = 10 V 500 TrenchFET Power MOSFETsN-Channel 603 at VGS = 4.5 V 200 Very Small Footprint High-Side Switching4 at VGS = - 10 V - 500P-Channel - 60 Low On-Re
si1025x.pdf
Si1025XVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (min) (V) RDS(on) () VGS(th) (V) ID (mA)Definition4 at VGS = - 10 V - 1 to - 3.0 - 500 - 60 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (ty
si1022r.pdf
Si1022RVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA)Definition1.25 at VGS = 10 V 60 1 to 2.5 330 TrenchFET Power MOSFETs Low On-Resistance: 1.25 Low Threshold: 2.5 V Low Input Capacitance: 30 pF Fast Switching Speed: 25 ns
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918