SI1021R Todos los transistores

 

SI1021R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI1021R

Código: F

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.25 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.19 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Conductancia de drenaje-sustrato (Cd): 10 pF

Resistencia drenaje-fuente RDS(on): 4 Ohm

Empaquetado / Estuche: SOT-416

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SI1021R Datasheet (PDF)

1.1. si1021r.pdf Size:155K _vishay

SI1021R
SI1021R

Si1021R Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) Definition - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 • TrenchFET® Power MOSFETs • High-Side Switching • Low On-Resistance: 4  • Low Threshold: - 2 V (typ.) • Fast Switching Speed: 20 ns (typ.)

5.1. si1024x.pdf Size:135K _vishay

SI1021R
SI1021R

Si1024X Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (mA) Definition 0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated 0.85 at VGS = 2.5 V Very Small Footprint 20 500 High-Side Switching 1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7 ? Low Threshold: 0.8 V (t

5.2. si1025x.pdf Size:113K _vishay

SI1021R
SI1021R

Si1025X Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (min) (V) RDS(on) () VGS(th) (V) ID (mA) Definition 4 at VGS = - 10 V - 1 to - 3.0 - 500 - 60 • TrenchFET® Power MOSFETs • High-Side Switching • Low On-Resistance: 4  • Low Threshold: - 2 V (typ.) • Fast Switching Speed: 20 ns (ty

 5.3. si1026x.pdf Size:114K _vishay

SI1021R
SI1021R

Si1026X Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA) Definition 1.40 at VGS = 10 V 60 1 to 2.5 500 • Low On-Resistance: 1.40  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 30 pF • Fast Switching Speed: 15 ns (typ.) • Low Input and Output

5.4. si1023cx.pdf Size:149K _vishay

SI1021R
SI1021R

Si1023CX Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition • TrenchFET® Power MOSFET 0.756 at VGS = - 4.5 V - 0.35 • 100 % Rg Tested 1.038 at VGS = - 2.5 V - 0.35 - 20 1 nC • Typical ESD protection: 1000 V (HBM) 1.44 at VGS = - 1.8 V - 0.1 • Fast Sw

 5.5. si1028x.pdf Size:148K _vishay

SI1021R
SI1021R

Si1028X Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) • ESD Protected: 550 V Typical HBM 0.650 at VGS = 10 V 0.48 • Material categorization: 30 0.5 For definitions of compliance please see 0.770 at VGS = 4.5 V 0.45 www.vishay.com/doc?99912 BENEFITS • Low Offset Voltage

5.6. si1022r.pdf Size:151K _vishay

SI1021R
SI1021R

Si1022R Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) Definition 1.25 at VGS = 10 V 60 1 to 2.5 330 • TrenchFET® Power MOSFETs • Low On-Resistance: 1.25  • Low Threshold: 2.5 V • Low Input Capacitance: 30 pF • Fast Switching Speed: 25 ns •

5.7. si1023x.pdf Size:110K _vishay

SI1021R
SI1021R

Si1023X Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA) Definition 1.2 at VGS = - 4.5 V - 350 • TrenchFET® Power MOSFET: 1.8 V Rated • Very Small Footprint 1.6 at VGS = - 2.5 V - 300 - 20 • High-Side Switching 2.7 at VGS = - 1.8 V - 150 • Low On-Resistance: 1.2 

5.8. si1029x.pdf Size:130K _vishay

SI1021R
SI1021R

Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (mA) Definition 1.40 at VGS = 10 V 500 • TrenchFET® Power MOSFETs N-Channel 60 3 at VGS = 4.5 V 200 • Very Small Footprint • High-Side Switching 4 at VGS = - 10 V - 500 P-Channel - 60 • Low On-Re

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