Справочник MOSFET. SI1021R

 

SI1021R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI1021R
   Маркировка: F
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.19 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1.7 nC
   Cossⓘ - Выходная емкость: 10 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
   Тип корпуса: SOT-416

 Аналог (замена) для SI1021R

 

 

SI1021R Datasheet (PDF)

 ..1. Size:155K  vishay
 si1021r.pdf

SI1021R SI1021R

Si1021RVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA)Definition- 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.)

 9.1. Size:135K  vishay
 si1024x.pdf

SI1021R SI1021R

Si1024XVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated0.85 at VGS = 2.5 V Very Small Footprint20 500 High-Side Switching1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7 Low

 9.2. Size:110K  vishay
 si1023x.pdf

SI1021R SI1021R

Si1023XVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition1.2 at VGS = - 4.5 V - 350 TrenchFET Power MOSFET: 1.8 V Rated Very Small Footprint1.6 at VGS = - 2.5 V - 300- 20 High-Side Switching2.7 at VGS = - 1.8 V - 150 Low On-Resistance: 1.2

 9.3. Size:114K  vishay
 si1026x.pdf

SI1021R SI1021R

Si1026XVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA)Definition1.40 at VGS = 10 V 60 1 to 2.5 500 Low On-Resistance: 1.40 Low Threshold: 2 V (typ.) Low Input Capacitance: 30 pF Fast Switching Speed: 15 ns (typ.) Low Input and Output

 9.4. Size:149K  vishay
 si1023cx.pdf

SI1021R SI1021R

Si1023CXVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET0.756 at VGS = - 4.5 V - 0.35 100 % Rg Tested1.038 at VGS = - 2.5 V - 0.35- 20 1 nC Typical ESD protection: 1000 V (HBM)1.44 at VGS = - 1.8 V - 0.1 Fast Sw

 9.5. Size:148K  vishay
 si1028x.pdf

SI1021R SI1021R

Si1028XVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) ESD Protected: 550 V Typical HBM0.650 at VGS = 10 V 0.48 Material categorization:30 0.5For definitions of compliance please see0.770 at VGS = 4.5 V 0.45www.vishay.com/doc?99912BENEFITS Low Offset Voltage

 9.6. Size:130K  vishay
 si1029x.pdf

SI1021R SI1021R

Si1029XVishay SiliconixComplementary N- and P-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (mA)Definition1.40 at VGS = 10 V 500 TrenchFET Power MOSFETsN-Channel 603 at VGS = 4.5 V 200 Very Small Footprint High-Side Switching4 at VGS = - 10 V - 500P-Channel - 60 Low On-Re

 9.7. Size:113K  vishay
 si1025x.pdf

SI1021R SI1021R

Si1025XVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (min) (V) RDS(on) () VGS(th) (V) ID (mA)Definition4 at VGS = - 10 V - 1 to - 3.0 - 500 - 60 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (ty

 9.8. Size:151K  vishay
 si1022r.pdf

SI1021R SI1021R

Si1022RVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA)Definition1.25 at VGS = 10 V 60 1 to 2.5 330 TrenchFET Power MOSFETs Low On-Resistance: 1.25 Low Threshold: 2.5 V Low Input Capacitance: 30 pF Fast Switching Speed: 25 ns

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History: TMT3N30G

 

 
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