SI1065X Todos los transistores

 ..1. Size:142K  vishay
 si1065x.pdf

Si1065X Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg Tested 0.156 at VGS = - 4.5 V Material categorization 1.18 For definitions of compliance please see 0.190 at VGS = - 2.5V - 12 1.07 6.7 nC www.vishay.com/doc?99912 0.245 at VGS = - 1.8V 0.49 APPLICATIONS Loa

 9.1. Size:154K  vishay
 si1062x.pdf

New Product Si1062X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Gate-Source ESD Protected 1000 V 0.420 at VGS = 4.5 V 0.5 Material categorization For definitions of compliance please see 0.492 at VGS = 2.5 V 0.2 www.vishay.com/doc?99912 20 1 nC 0.597 at VGS = 1.8 V 0.2

 9.2. Size:121K  vishay
 si1069x.pdf

Si1069X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.184 at VGS = - 4.5 V - 0.94 TrenchFET Power MOSFET - 20 4.23 0.268 at VGS = - 2.5 V - 0.78 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable

 9.3. Size:120K  vishay
 si1067x.pdf

Si1067X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.150 at VGS = - 4.5 V 1.06 TrenchFET Power MOSFET - 20 0.166 at VGS = - 2.5V 1.0 6.0 100 % Rg Tested 0.214 at VGS = - 1.8V 0.49 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load