SI1404BDH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI1404BDH
   Código: AF*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.3 V
   Qgⓘ - Carga de la puerta: 1.9 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.238 Ohm
   Paquete / Cubierta: SC-70

Búsqueda de reemplazo de MOSFET SI1404BDH

SI1404BDH Datasheet (PDF)

..1. Size:105K vishay
si1404bd si1404bdh.pdf

Si1404BDHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.238 at VGS = 4.5 V 1.9 TrenchFET Power MOSFET30 1.1 nC0.380 at VGS = 2.5 V 1.51 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSC-70 (6-LEADS) Load Switch f

9.1. Size:259K vishay
si1401edh.pdf

New ProductSi1401EDHVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.034 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET0.046 at VGS = - 2.5 V - 4 Typical ESD Performance 1500 V- 12 14.1 nC 100 % Rg Tested0.070 at VGS = - 1.8 V - 4 Compl

9.2. Size:75K vishay
si1407dl.pdf

Si1407DLVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) rDS(on) ()ID (A)Pb-free 1.8 V RatedAvailable0.130 at VGS = - 4.5 V - 1.8RoHS*- 12 0.170 at VGS = - 2.5 V - 1.5COMPLIANT0.225 at VGS = - 1.8 V - 1.3SOT-363SC-70 (6-LEADS)D 1 6 DMarking CodeOC XX5D 2 DLot Traceabilityand Date Code

9.3. Size:409K vishay
si1403dl.pdf

Si1403DLNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)Pb-freeAvailable0.180 at VGS = - 4.5 V 1.5RoHS*- 25 0.200 at VGS = - 3.6 V 1.4COMPLIANT0.265 at VGS = - 2.5 V 1.2SOT-363SC-70 (6-LEADS)D 1 6 DMarking CodeOA XX5D 2 DLot Traceabilityand Date CodeG

9.4. Size:229K vishay
si1406dh.pdf

Si1406DHVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.065 at VGS = 4.5 V 3.9 TrenchFET Power MOSFETs: 1.8 V Rated0.075 at VGS = 2.5 V 20 3.6 Thermally Enhanced SC-70 Package0.096 at VGS = 1.8 V 3.2 Compliant to RoHS Directive 2002/95/ECAPPLICAT

9.5. Size:91K vishay
si1400dl.pdf

Si1400DLVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.150 at VGS = 4.5 V 1.7 TrenchFET Power MOSFET: 2.5 V Rated - 200.235 at VGS = 2.5 V 1.3 Compliant to RoHS Directive 2002/95/ECSOT-363SC-70 (6-LEADS)D 1 6 DMarking CodeND XX5D 2 DLot Traceab

9.6. Size:94K vishay
si1402dh.pdf

Si1402DHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.077 at VGS = 4.5 V 3.4 TrenchFET Power MOSFET: 2.5 V Rated 300.120 at VGS = 2.5 V 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable ApplicationsSOT-363SC-70 (6-LEA

9.7. Size:245K vishay
si1405dl.pdf

Si1405DLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.125 at VGS = - 4.5 V 1.8 TrenchFET Power MOSFET: 1.8 V Rated- 8 0.160 at VGS = - 2.5 V 1.6 Compliant to RoHS Directive 2002/95/EC0.210 at VGS = - 1.8 V 1.4SOT-363SC-70 (6-LEADS)D 1 6 DMar

9.8. Size:235K vishay
si1403cdl.pdf

Si1403CDLVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.140 at VGS = - 4.5 V - 2.1 TrenchFET Power MOSFET- 20 0.160 at VGS = - 3.6 V - 1.9 4 nC 100 % Rg Tested0.222 at VGS = - 2.5 V - 1.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

9.9. Size:238K vishay
si1405bdh.pdf

Si1405BDHVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.112 at VGS = - 4.5 V - 1.6 TrenchFET Power MOSFET- 8 0.160 at VGS = - 2.5 V - 1.6 3.67 nC Compliant to RoHS Directive 2002/95/EC0.210 at VGS = - 1.8 V - 1.6APPLICATIONS Load Switch for

9.10. Size:249K vishay
si1403bdl.pdf

Si1403BDLVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.150 at VGS = - 4.5 V - 1.5 TrenchFET Power MOSFET 0.175 at VGS = - 3.6 V - 1.4 2.9- 20 Compliant to RoHS Directive 2002/95/EC 0.265 at VGS = - 2.5 V - 1.2SOT-363SC-70 (6-LEADS)D 1 6 D

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: