SI1413EDH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI1413EDH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1600 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: SOT-363

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SI1413EDH Datasheet (PDF)

..1. Size:237K vishay
si1413edh.pdf

Si1413EDHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.115 at VGS = - 4.5 V - 2.9 TrenchFET Power MOSFET: 1.8 V Rated ESD Protected: 3000 V - 20 0.155 at VGS = - 2.5 V - 2.4 Thermally Enhanced SC-70 Package 0.220 at VGS = - 1.8 V - 2.0 Compliant to

8.1. Size:236K vishay
si1413dh.pdf

Si1413DHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.115 at VGS = - 4.5 V - 2.9 TrenchFET Power MOSFETs: 1.8 V Rated0.155 at VGS = - 2.5 V - 20 - 2.4 Thermally Enhanced SC-70 Package 0.220 at VGS = - 1.8 V - 2.0 Compliant to RoHS Directive 2002/9

9.1. Size:225K vishay
si1414dh.pdf

New ProductSi1414DHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.046 at VGS = 4.5 V TrenchFET Power MOSFET4 100 % Rg Tested0.050 at VGS = 2.5 V 30 4 5.7 nC Compliant to RoHS Directive 2002/95/EC0.057 at VGS = 1.8 V 4APPLICATIONS

9.2. Size:236K vishay
si1410edh.pdf

Si1410EDHVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.070 at VGS = 4.5 V 3.7 TrenchFET Power MOSFETs: 1.8 V Rated 20 0.080 at VGS = 2.5 V 3.4 ESD Protected: 2000 V Thermally Enhanced SC-70 Package 0.100 at VGS = 1.8 V 3.0 Compliant to RoHS Direc

9.3. Size:258K vishay
si1416edh.pdf

New ProductSi1416EDHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.058 at VGS = 10 V 3.9 TrenchFET Power MOSFET30 0.064 at VGS = 4.5 V 3.9 3.5 nC Typical ESD Protection 1500 V in HBM0.077 at VGS = 2.5 V 3.9 100 % Rg Tested Compliant to

9.4. Size:100K vishay
si1419dh.pdf

Si1419DHVishay SiliconixP-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition5.0 at VGS = - 10 V - 0.38 TrenchFET Power MOSFETS- 200 4.15.1 at VGS = - 6 V - 0.37 Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 2002/9

9.5. Size:101K vishay
si1411dh.pdf

Si1411DHVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition2.6 at VGS = - 10 V - 0.52 TrenchFET Power MOSFETS- 150 4.2 nC2.7 at VGS = - 6 V - 0.51 Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 200

9.6. Size:76K vishay
si1417dh.pdf

New ProductSi1417DHVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8 V RatedVDS (V) rDS(on) ()ID (A)Pb-free Thermally Enhanced SC-70 Package0.085 at VGS = - 4.5 V - 3.3Available0.115 at VGS = - 2.5 V - 12 - 2.9RoHS*APPLICATIONSCOMPLIANT0.160 at VGS = - 1.8 V - 2.4 Load Switching PA Switc

9.7. Size:237K vishay
si1417edh.pdf

Si1417EDHVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.085 at VGS = - 4.5 V - 3.3 TrenchFET Power MOSFET: 1.8 V Rated ESD Protected: 3000 V - 12 0.115 at VGS = - 2.5 V - 2.9 Thermally Enhanced SC-70 Package 0.160 at VGS = - 1.8 V - 2.4 Compliant to

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