SI1413EDH
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI1413EDH
Marking Code: BA*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45
V
|Id|ⓘ - Maximum Drain Current: 2.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.6
nC
trⓘ - Rise Time: 1600
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115
Ohm
Package:
SOT-363
SI1413EDH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI1413EDH
Datasheet (PDF)
..1. Size:237K vishay
si1413edh.pdf 
Si1413EDHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.115 at VGS = - 4.5 V - 2.9 TrenchFET Power MOSFET: 1.8 V Rated ESD Protected: 3000 V - 20 0.155 at VGS = - 2.5 V - 2.4 Thermally Enhanced SC-70 Package 0.220 at VGS = - 1.8 V - 2.0 Compliant to
8.1. Size:236K vishay
si1413dh.pdf
Si1413DHVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.115 at VGS = - 4.5 V - 2.9 TrenchFET Power MOSFETs: 1.8 V Rated0.155 at VGS = - 2.5 V - 20 - 2.4 Thermally Enhanced SC-70 Package 0.220 at VGS = - 1.8 V - 2.0 Compliant to RoHS Directive 2002/9
9.1. Size:225K vishay
si1414dh.pdf
New ProductSi1414DHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.046 at VGS = 4.5 V TrenchFET Power MOSFET4 100 % Rg Tested0.050 at VGS = 2.5 V 30 4 5.7 nC Compliant to RoHS Directive 2002/95/EC0.057 at VGS = 1.8 V 4APPLICATIONS
9.2. Size:236K vishay
si1410edh.pdf
Si1410EDHVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.070 at VGS = 4.5 V 3.7 TrenchFET Power MOSFETs: 1.8 V Rated 20 0.080 at VGS = 2.5 V 3.4 ESD Protected: 2000 V Thermally Enhanced SC-70 Package 0.100 at VGS = 1.8 V 3.0 Compliant to RoHS Direc
9.3. Size:258K vishay
si1416edh.pdf
New ProductSi1416EDHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.058 at VGS = 10 V 3.9 TrenchFET Power MOSFET30 0.064 at VGS = 4.5 V 3.9 3.5 nC Typical ESD Protection 1500 V in HBM0.077 at VGS = 2.5 V 3.9 100 % Rg Tested Compliant to
9.4. Size:100K vishay
si1419dh.pdf
Si1419DHVishay SiliconixP-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition5.0 at VGS = - 10 V - 0.38 TrenchFET Power MOSFETS- 200 4.15.1 at VGS = - 6 V - 0.37 Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 2002/9
9.5. Size:101K vishay
si1411dh.pdf
Si1411DHVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition2.6 at VGS = - 10 V - 0.52 TrenchFET Power MOSFETS- 150 4.2 nC2.7 at VGS = - 6 V - 0.51 Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 200
9.6. Size:76K vishay
si1417dh.pdf
New ProductSi1417DHVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8 V RatedVDS (V) rDS(on) ()ID (A)Pb-free Thermally Enhanced SC-70 Package0.085 at VGS = - 4.5 V - 3.3Available0.115 at VGS = - 2.5 V - 12 - 2.9RoHS*APPLICATIONSCOMPLIANT0.160 at VGS = - 1.8 V - 2.4 Load Switching PA Switc
9.7. Size:237K vishay
si1417edh.pdf
Si1417EDHVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.085 at VGS = - 4.5 V - 3.3 TrenchFET Power MOSFET: 1.8 V Rated ESD Protected: 3000 V - 12 0.115 at VGS = - 2.5 V - 2.9 Thermally Enhanced SC-70 Package 0.160 at VGS = - 1.8 V - 2.4 Compliant to
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