SI1551DL Todos los transistores

 

SI1551DL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI1551DL

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.29 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm

Encapsulados: SOT-363

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SI1551DL datasheet

 ..1. Size:235K  vishay
si1551dl.pdf pdf_icon

SI1551DL

Si1551DL Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 1.9 at VGS = 4.5 V 0.30 TrenchFET Power MOSFET 2.5 V Rated 3.7 at VGS = 2.7 V N-Channel 20 0.22 0.72 Compliant to RoHS Directive 2002/95/EC 4.2 at VGS = 2.5 V 0.21 0.995 at VGS = - 4.5 V

 9.1. Size:233K  vishay
si1555dl.pdf pdf_icon

SI1551DL

Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.385 at VGS = 4.5 V 0.70 TrenchFET Power MOSFET N-Channel 20 0.630 at VGS = 2.5 V 0.54 Compliant to RoHS Directive 2002/95/EC 0.600 at VGS = - 4.5 V - 0.60 0.850 at VGS = - 2.5 V - 0.50 P-Cha

 9.2. Size:258K  vishay
si1553cdl.pdf pdf_icon

SI1551DL

Si1553CDL Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.390 at VGS = 4.5 V 0.7 TrenchFET Power MOSFET N-Channel 20 0.510 at VGS = 2.7 V 0.5 0.55 100 % Rg Tested 0.578 at VGS = 2.5 V 0.5 Compliant to RoHS Directive 2002/95/EC 0.850 at VGS

 9.3. Size:269K  vishay
si1557dh.pdf pdf_icon

SI1551DL

Si1557DH Vishay Siliconix N- and P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.235 at VGS = 4.5 V 1.3 TrenchFET Power MOSFETs 0.280 at VGS = 2.5 V N-Channel 12 1.2 Thermally Enhanced SC-70 Package 0.340 at VGS = 1.8 V 1.0 Fast Switching to Minimize Gate and Switchin

Otros transistores... SI1470DH , SI1471DH , SI1473DH , SI1480DH , SI1488DH , SI1489EDH , SI1499DH , SI1539CDL , AO3401 , SI1553CDL , SI1555DL , SI1563DH , SI1563EDH , SI1865DDL , SI1869DH , SI1902CDL , SI1917EDH .

History: FTP14N50C | STK7002 | SI1400DL

 

 

 


History: FTP14N50C | STK7002 | SI1400DL

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