SI1551DL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI1551DL
Código: RD*
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.27 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.29 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 0.3 nC
trⓘ - Tiempo de subida: 30 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
Paquete / Cubierta: SOT-363
Búsqueda de reemplazo de MOSFET SI1551DL
SI1551DL Datasheet (PDF)
si1551dl.pdf
Si1551DLVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition1.9 at VGS = 4.5 V 0.30 TrenchFET Power MOSFET: 2.5 V Rated3.7 at VGS = 2.7 V N-Channel 20 0.22 0.72 Compliant to RoHS Directive 2002/95/EC4.2 at VGS = 2.5 V0.210.995 at VGS = - 4.5 V
si1555dl.pdf
Si1555DLVishay SiliconixComplementary Low-Threshold MOSFET PairFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.385 at VGS = 4.5 V0.70 TrenchFET Power MOSFETN-Channel 200.630 at VGS = 2.5 V0.54 Compliant to RoHS Directive 2002/95/EC0.600 at VGS = - 4.5 V - 0.600.850 at VGS = - 2.5 V - 0.50P-Cha
si1553cdl.pdf
Si1553CDLVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.390 at VGS = 4.5 V 0.7 TrenchFET Power MOSFETN-Channel 20 0.510 at VGS = 2.7 V 0.5 0.55 100 % Rg Tested0.578 at VGS = 2.5 V 0.5 Compliant to RoHS Directive 2002/95/EC0.850 at VGS
si1557dh.pdf
Si1557DHVishay SiliconixN- and P-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.235 at VGS = 4.5 V 1.3 TrenchFET Power MOSFETs0.280 at VGS = 2.5 V N-Channel 12 1.2 Thermally Enhanced SC-70 Package0.340 at VGS = 1.8 V 1.0 Fast Switching to Minimize Gate and Switchin
si1555dl-t1.pdf
SI1555DL-T1www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5 V
si1553cdl-t1-ge3.pdf
Si1553CDL-T1-GE3www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = -
Otros transistores... SI1470DH , SI1471DH , SI1473DH , SI1480DH , SI1488DH , SI1489EDH , SI1499DH , SI1539CDL , 20N50 , SI1553CDL , SI1555DL , SI1563DH , SI1563EDH , SI1865DDL , SI1869DH , SI1902CDL , SI1917EDH .
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