All MOSFET. SI1551DL Datasheet

 

SI1551DL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1551DL
   Marking Code: RD*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.29 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.3 nC
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: SOT-363

 SI1551DL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1551DL Datasheet (PDF)

 ..1. Size:235K  vishay
 si1551dl.pdf

SI1551DL SI1551DL

Si1551DLVishay SiliconixComplementary 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition1.9 at VGS = 4.5 V 0.30 TrenchFET Power MOSFET: 2.5 V Rated3.7 at VGS = 2.7 V N-Channel 20 0.22 0.72 Compliant to RoHS Directive 2002/95/EC4.2 at VGS = 2.5 V0.210.995 at VGS = - 4.5 V

 9.1. Size:233K  vishay
 si1555dl.pdf

SI1551DL SI1551DL

Si1555DLVishay SiliconixComplementary Low-Threshold MOSFET PairFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.385 at VGS = 4.5 V0.70 TrenchFET Power MOSFETN-Channel 200.630 at VGS = 2.5 V0.54 Compliant to RoHS Directive 2002/95/EC0.600 at VGS = - 4.5 V - 0.600.850 at VGS = - 2.5 V - 0.50P-Cha

 9.2. Size:258K  vishay
 si1553cdl.pdf

SI1551DL SI1551DL

Si1553CDLVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a Qg (Typ.)Definition0.390 at VGS = 4.5 V 0.7 TrenchFET Power MOSFETN-Channel 20 0.510 at VGS = 2.7 V 0.5 0.55 100 % Rg Tested0.578 at VGS = 2.5 V 0.5 Compliant to RoHS Directive 2002/95/EC0.850 at VGS

 9.3. Size:269K  vishay
 si1557dh.pdf

SI1551DL SI1551DL

Si1557DHVishay SiliconixN- and P-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.235 at VGS = 4.5 V 1.3 TrenchFET Power MOSFETs0.280 at VGS = 2.5 V N-Channel 12 1.2 Thermally Enhanced SC-70 Package0.340 at VGS = 1.8 V 1.0 Fast Switching to Minimize Gate and Switchin

 9.4. Size:889K  cn vbsemi
 si1555dl-t1.pdf

SI1551DL SI1551DL

SI1555DL-T1www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5 V

 9.5. Size:874K  cn vbsemi
 si1553cdl-t1-ge3.pdf

SI1551DL SI1551DL

Si1553CDL-T1-GE3www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = -

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