SI1917EDH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si1917EDHVishay SiliconixDual P-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.370 at VGS = - 4.5 V - 1.15 TrenchFET Power MOSFETs: 1.8 V Rated- 12 0.575 at VGS = - 2.5 V - 0.92 ESD Protected: 3000 V0.800 at VGS = - 1.8 V - 0.78 Thermally Enhanced SC-70 Package Comp

SI1917EDHwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1 2 5 G2

Si1913DHVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.490 at VGS = - 4.5 V - 1.0 TrenchFET Power MOSFETs: 1.8 V Rated- 20 0.750 at VGS = - 2.5 V - 0.81 Thermally Enhanced SC-70 Package 1.10 at VGS = - 1.8 V - 0.67 Compliant to RoHS Directive 2002/9

Si1912EDHVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.280 at VGS = 4.5 V 1.28 TrenchFET Power MOSFETs: 1.8 V Rated20 0.360 at VGS = 2.5 V 1.13 ESD Protected: 2000 V0.450 at VGS = 1.8 V 1.0 Thermally Enhanced SC-70 Package Compliant to RoHS D

Si1913EDHVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.490 at VGS = - 4.5 V - 1.0 TrenchFET Power MOSFETs: 1.8 V Rated- 20 0.750 at VGS = - 2.5 V - 0.81 ESD Protected: 3000 V1.1 at VGS = - 1.8 V - 0.67 Thermally Enhanced SC-70 Package Complia