SI1917EDH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI1917EDH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 710 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.37 Ohm
   Paquete / Cubierta: SOT-363

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SI1917EDH Datasheet (PDF)

..1. Size:252K vishay
si1917edh.pdf

Si1917EDHVishay SiliconixDual P-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.370 at VGS = - 4.5 V - 1.15 TrenchFET Power MOSFETs: 1.8 V Rated- 12 0.575 at VGS = - 2.5 V - 0.92 ESD Protected: 3000 V0.800 at VGS = - 1.8 V - 0.78 Thermally Enhanced SC-70 Package Comp

..2. Size:2146K cn vbsemi
si1917edh.pdf

SI1917EDHwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1 2 5 G2

9.1. Size:242K vishay
si1913dh.pdf

Si1913DHVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.490 at VGS = - 4.5 V - 1.0 TrenchFET Power MOSFETs: 1.8 V Rated- 20 0.750 at VGS = - 2.5 V - 0.81 Thermally Enhanced SC-70 Package 1.10 at VGS = - 1.8 V - 0.67 Compliant to RoHS Directive 2002/9

9.2. Size:249K vishay
si1912edh.pdf

Si1912EDHVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.280 at VGS = 4.5 V 1.28 TrenchFET Power MOSFETs: 1.8 V Rated20 0.360 at VGS = 2.5 V 1.13 ESD Protected: 2000 V0.450 at VGS = 1.8 V 1.0 Thermally Enhanced SC-70 Package Compliant to RoHS D

9.3. Size:251K vishay
si1913edh.pdf

Si1913EDHVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.490 at VGS = - 4.5 V - 1.0 TrenchFET Power MOSFETs: 1.8 V Rated- 20 0.750 at VGS = - 2.5 V - 0.81 ESD Protected: 3000 V1.1 at VGS = - 1.8 V - 0.67 Thermally Enhanced SC-70 Package Complia

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