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Si1917EDH Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.370 at VGS = - 4.5 V - 1.15 TrenchFET Power MOSFETs 1.8 V Rated - 12 0.575 at VGS = - 2.5 V - 0.92 ESD Protected 3000 V 0.800 at VGS = - 1.8 V - 0.78 Thermally Enhanced SC-70 Package Comp

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SI1917EDH www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 2 5 G2

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Si1913DH Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.490 at VGS = - 4.5 V - 1.0 TrenchFET Power MOSFETs 1.8 V Rated - 20 0.750 at VGS = - 2.5 V - 0.81 Thermally Enhanced SC-70 Package 1.10 at VGS = - 1.8 V - 0.67 Compliant to RoHS Directive 2002/9

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Si1912EDH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.280 at VGS = 4.5 V 1.28 TrenchFET Power MOSFETs 1.8 V Rated 20 0.360 at VGS = 2.5 V 1.13 ESD Protected 2000 V 0.450 at VGS = 1.8 V 1.0 Thermally Enhanced SC-70 Package Compliant to RoHS D