SI2301CDS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI2301CDS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.112 Ohm
   Paquete / Cubierta: SOT-23

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SI2301CDS Datasheet (PDF)

..1. Size:193K vishay
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Si2301CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.112 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET- 20 3.3 nC Compliant to RoHS Directive 2002/95/EC0.142 at VGS = - 2.5 V - 2.7APPLICATIONS Load SwitchTO-236 (SOT-23) G

..2. Size:9298K cn tech public
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0.1. Size:892K cn vbsemi
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SI2301CDS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

6.1. Size:190K vishay
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8.1. Size:61K vishay
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Si2301DSVishay SiliconixP-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.130 @ VGS = - 4.5 V -2.3-20200.190 @ VGS = - 2.5 V -1.9TO-236(SOT-23)G 13 DOrdering Information: Si2301DS-T1S 2Top ViewSi2301DS (A1)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS -20

8.2. Size:333K vishay
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MCC Micro Commercial ComponentsTM20736 Marilla Street Chatsworth Micro Commercial ComponentsCA 91311SI2301 Phone: (818) 701-4933Fax: (818) 701-4939Features P-Channel -20V,-2.8A, RDS(ON)=120m@VGS=-4.5V RDS(ON)=150m@VGS=-2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor High Sp

8.3. Size:46K vishay
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Si2301ADSNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)b0.130 @ VGS = 4.5 V 2.0200.190 @ VGS = 2.5 V 1.6TO-236(SOT-23)G 13 DS 2Top ViewSi2301DS (1A)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20V

8.4. Size:184K vishay
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Si2301BDSVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)bPb-free0.100 at VGS = - 4.5 V Available- 2.4- 200.150 at VGS = - 2.5 V RoHS*- 2.0COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2301 BDS (L1)** Marking CodeOrdering Information: Si2301BDS-T1Si2301BDS-T1-E3 (Lead (Pb)

8.5. Size:333K mcc
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M C CRMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street ChatsworthCA 91311SI2301APhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"P-Channel -20V,-2.8A, RDS(ON)=120m@VGS=-4.5VRDS(ON)=150m@VGS=-2.5V Enhancement Mode High dense cell design for extremely low RDS(ON)

8.6. Size:324K mcc
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8.7. Size:3667K htsemi
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SI230120V P-Channel Enhancement Mode MOSFETVDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130mRDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30

8.8. Size:1114K shenzhen
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd Sl2301AP-Channel SI2301AMOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.080 @ VGS = -4.5 V -2.8-20200.110 @ VGS = -2.5 V -2.0SOT-23/-3LG 13 DS 2ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS -20VVGate-Source Voltage VGS "8Continuous Drain Curr

8.9. Size:885K shenzhen
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2301P-Channel SI2301 MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.120 @ VGS = -4.5 V -2.8-20200.190 @ VGS = -2.5 V -1.8(SOT-23-3L)(SOT-23)G 13 DS 2Top ViewSI2301(A1sHB)*ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS -20VVGate-Source V

8.10. Size:795K blue-rocket-elect
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SI2301 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,MOS Trench FET Power MOSFET 100% Rg Tested. / Applications Primarily the display screen drive applications. / Equivalen

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SMD Type MOSFETP-Channel Enhancement MOSFET SI2301DS (KI2301DS) FeaturesSOT-23Unit: mm+0.12.9 -0.1 VDS (V) =-20V+0.10.4-0.1 RDS(ON) 130m (VGS =-4.5V)3 RDS(ON) 190m (VGS =-2.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

8.12. Size:1943K kexin
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SMD Type MOSFETP-Channel Enhancement MOSFET SI2301BDS (KI2301BDS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5

8.13. Size:1968K kexin
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SMD Type MOSFETP-Channel Enhancement MOSFET SI2301DS (KI2301DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 se

8.14. Size:185K kexin
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SMD Type MOSFETP-Channel Enhancement MOSFET SI2301 (KI2301) Features VDS (V) =-20V RDS(ON) 130m (VGS =-4.5V)3 RDS(ON) 190m (VGS =-2.5V)12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20

8.15. Size:1887K kexin
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SMD Type MOSFETP-Channel Enhancement MOSFET SI2301BDS (KI2301BDS)SOT-23Unit: mm Features+0.12.9 -0.10.4+0.1-0.1 VDS (V) =-20V3 RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Stea

8.16. Size:949K umw-ic
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RUMW UMW SI2301ASOT23 UMW SI2301AP-Channel 20-V(D-S) MOSFETID V(BR)DSS RDS(on)MAX 112m@-4.5V-20VA-2.81. GATE 142m@-2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zz Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit A1Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Valu

8.17. Size:827K umw-ic
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RUMW UMW SI2301BUMW SI2301BUMW SI2301B P-Channel 20-V(D-S) MOSFET UMW SI2301BID V(BR)DSS RDS(on)MAX SOT-23 120 m@-4.5V-20V2.5Am@-2.5V150 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE z Load Switch for Portable Devices TrenchFET Power MOSFET z DC/DC Converter MARKING Equivalent Circuit A1SHBMaximum ratings (Ta=25 unless otherwise note

8.18. Size:5352K born
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SI2301-PMOSFET ROHSP-Channel MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)Parameter Symbol LimitUnitDrain-Source Voltage VDS -20V Gate-Source Voltage 10VGSIDContinuous Drain

8.19. Size:1898K born
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SI2301SMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D High-side Load Switch 125m @ 4.5V Switching Circuits -20V -2.3A High Speed line Driver 140m @ 3.3V Order Information

8.20. Size:279K guangdong hottech
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Plastic-Encapsulate MosfetsFEATURESSI2301P-Channel MOSFETHigh dense cell design for extremely low RDS(ON)Rugged and reliableCase Material: Molded Plastic.Absolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Ratings UnitsDrain-Source Voltage VDS -20 V1.GateGate-Source Voltage VGS 8 V2.SourceSOT-23Drain Current (Continuous) ID -2.3 A 3.Drain1D

8.21. Size:579K mdd
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SI2301S SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 125m@4.5V 1. GATE -2.3A -20V 2. SOURCE 140m@3.3V 1 3. DRAIN 2 APPLICATION Features Load Switch for Portable Devices Trench FET Power MOSFET DC/DC Converter MARKING Equivalent circuit D A1sHB G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Ree

8.22. Size:932K mdd
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SI2301 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 70m@4.5V 1. GATE -3.0A -20V 2. SOURCE 78m@3.3V 1 3. DRAIN 2 APPLICATION Features Load Switch for Portable Devices Trench FET Power MOSFET DC/DC Converter MARKING Equivalent circuit D A1sHB G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Reel

8.23. Size:303K msksemi
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www.msksemi.comSI2301AI-MSSemiconductor CompianceGeneral Features V = -20V,I = -3ADS DR

8.24. Size:837K cn szxunrui
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SOT-23 Plastic-Encapsulate MOSFETSSI2301ASI2301A P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.085@-4.5V-20V -3.0A30.110@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA1 wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter

8.25. Size:809K cn szxunrui
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SOT-23 Plastic-Encapsulate MOSFETSSI2301SI2301 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.100@-4.5V-20V -2.8A30.130 @-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount package-A1sHB wAPPLICATIONLoad Switch for Portable DevicesDC/DC Conv

8.26. Size:2897K cn puolop
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SI2301A20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3.0A 110mRDS(ON), Vgs@-2.5V, Ids@-2.0A 140m FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter Millimeter REF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.3

8.27. Size:2196K cn puolop
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SI2301 -20V P-Channel Enhancement Mode MOSFETVDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.3A 130mRDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DSOT-23GSMillimeterMillimeterREF. REF.Min.Max. Min. Max.A 2.80 3.00 G 1.80 2.00B 2.30 2.50 H 0.90 1.1C 1.20

8.28. Size:1356K cn yongyutai
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SI2301SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP MOS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage-20 VBVDSS-Gate- Source Voltage+10V VGS-Drain Current (continuous)I -2.2

8.29. Size:2248K cn twgmc
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SI2301SI2305AO3401SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V( D-S) MOSFETFEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent CircuitA1SHBA09TA19T1.GATE2.SOURCE3.DRAINMaximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20V Gate-Sourc

8.30. Size:893K cn vbsemi
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SI2301ADS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

8.31. Size:866K cn vbsemi
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SI2301BDS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA

8.32. Size:866K cn vbsemi
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SI2301DS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

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