SI2301CDS Specs and Replacement
Type Designator: SI2301CDS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ -
Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
Package: SOT-23
- MOSFET ⓘ Cross-Reference Search
SI2301CDS datasheet
..1. Size:193K vishay
si2301cds.pdf 
Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.112 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET - 20 3.3 nC Compliant to RoHS Directive 2002/95/EC 0.142 at VGS = - 2.5 V - 2.7 APPLICATIONS Load Switch TO-236 (SOT-23) G ... See More ⇒
0.1. Size:892K cn vbsemi
si2301cds-t1.pdf
SI2301CDS-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒
6.1. Size:190K vishay
si2301cd.pdf
Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.112 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET - 20 3.3 nC Compliant to RoHS Directive 2002/95/EC 0.142 at VGS = - 2.5 V - 2.7 APPLICATIONS Load Switch TO-236 (SOT-23) G ... See More ⇒
8.1. Size:61K vishay
si2301ds.pdf
Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V -2.3 -20 20 0.190 @ VGS = - 2.5 V -1.9 TO-236 (SOT-23) G 1 3 D Ordering Information Si2301DS-T1 S 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20... See More ⇒
8.2. Size:333K vishay
si2301-tp.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2301 Phone (818) 701-4933 Fax (818) 701-4939 Features P-Channel -20V,-2.8A, RDS(ON)=120m @VGS=-4.5V RDS(ON)=150m @VGS=-2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor High Sp... See More ⇒
8.3. Size:46K vishay
si2301ads.pdf
Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b 0.130 @ VGS = 4.5 V 2.0 20 0.190 @ VGS = 2.5 V 1.6 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V... See More ⇒
8.4. Size:184K vishay
si2301bds.pdf
Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)b Pb-free 0.100 at VGS = - 4.5 V Available - 2.4 - 20 0.150 at VGS = - 2.5 V RoHS* - 2.0 COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301 BDS (L1)* * Marking Code Ordering Information Si2301BDS-T1 Si2301BDS-T1-E3 (Lead (Pb)... See More ⇒
8.6. Size:324K mcc
si2301.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2301 Phone (818) 701-4933 Fax (818) 701-4939 Features P-Channel -20V,-2.8A, RDS(ON)=120m @VGS=-4.5V RDS(ON)=150m @VGS=-2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor High Sp... See More ⇒
8.7. Size:3667K htsemi
si2301.pdf
SI2301 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30... See More ⇒
8.8. Size:1114K shenzhen
si2301a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Sl2301A P-Channel SI2301AMOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.080 @ VGS = -4.5 V -2.8 -20 20 0.110 @ VGS = -2.5 V -2.0 SOT-23/-3L G 1 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V V Gate-Source Voltage VGS "8 Continuous Drain Curr... See More ⇒
8.9. Size:885K shenzhen
si2301 a1shb.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2301 P-Channel SI2301 MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.120 @ VGS = -4.5 V -2.8 -20 20 0.190 @ VGS = -2.5 V -1.8 (SOT-23-3L) (SOT-23) G 1 3 D S 2 Top View SI2301(A1sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V V Gate-Source V... See More ⇒
8.10. Size:795K blue-rocket-elect
si2301.pdf
SI2301 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,MOS Trench FET Power MOSFET 100% Rg Tested. / Applications Primarily the display screen drive applications. / Equivalen... See More ⇒
8.11. Size:1698K kexin
si2301ds.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET SI2301DS (KI2301DS) Features SOT-23 Unit mm +0.1 2.9 -0.1 VDS (V) =-20V +0.1 0.4-0.1 RDS(ON) 130m (VGS =-4.5V) 3 RDS(ON) 190m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit... See More ⇒
8.12. Size:1943K kexin
si2301bds-3.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 ... See More ⇒
8.13. Size:1968K kexin
si2301ds-3.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET SI2301DS (KI2301DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 se... See More ⇒
8.14. Size:185K kexin
si2301 ki2301.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET SI2301 (KI2301) Features VDS (V) =-20V RDS(ON) 130m (VGS =-4.5V) 3 RDS(ON) 190m (VGS =-2.5V) 12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20... See More ⇒
8.15. Size:1887K kexin
si2301bds.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) SOT-23 Unit mm Features +0.1 2.9 -0.1 0.4+0.1 -0.1 VDS (V) =-20V 3 RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Stea... See More ⇒
8.16. Size:949K umw-ic
si2301a.pdf
R UMW UMW SI2301A SOT 23 UMW SI2301A P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX 112m @-4.5V -20V A -2.8 1. GATE 142m @-2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET z z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit A1 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Valu... See More ⇒
8.17. Size:827K umw-ic
si2301b.pdf
R UMW UMW SI2301B UMW SI2301B UMW SI2301B P-Channel 20-V(D-S) MOSFET UMW SI2301B ID V(BR)DSS RDS(on)MAX SOT-23 120 m @-4.5V -20V 2.5 A m @-2.5V 150 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE z Load Switch for Portable Devices TrenchFET Power MOSFET z DC/DC Converter MARKING Equivalent Circuit A1SHB Maximum ratings (Ta=25 unless otherwise note... See More ⇒
8.18. Size:5352K born
si2301-p.pdf
SI2301-P MOSFET ROHS P-Channel MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage 10 VGS ID Continuous Drain ... See More ⇒
8.19. Size:1898K born
si2301s.pdf
SI2301S MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D High-side Load Switch 125m @ 4.5V Switching Circuits -20V -2.3A High Speed line Driver 140m @ 3.3V Order Information ... See More ⇒
8.20. Size:279K guangdong hottech
si2301.pdf
Plastic-Encapsulate Mosfets FEATURES SI2301 P-Channel MOSFET High dense cell design for extremely low RDS(ON) Rugged and reliable Case Material Molded Plastic. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Voltage VDS -20 V 1.Gate Gate-Source Voltage VGS 8 V 2.Source SOT-23 Drain Current (Continuous) ID -2.3 A 3.Drain 1 D... See More ⇒
8.21. Size:579K mdd
si2301s.pdf
SI2301S SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 125m @4.5V 1. GATE -2.3A -20V 2. SOURCE 140m @3.3V 1 3. DRAIN 2 APPLICATION Features Load Switch for Portable Devices Trench FET Power MOSFET DC/DC Converter MARKING Equivalent circuit D A1sHB G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Ree... See More ⇒
8.22. Size:932K mdd
si2301.pdf
SI2301 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 70m @4.5V 1. GATE -3.0A -20V 2. SOURCE 78m @3.3V 1 3. DRAIN 2 APPLICATION Features Load Switch for Portable Devices Trench FET Power MOSFET DC/DC Converter MARKING Equivalent circuit D A1sHB G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Reel ... See More ⇒
8.23. Size:303K msksemi
si2301ai-ms.pdf
www.msksemi.com SI2301AI-MS Semiconductor Compiance General Features V = -20V,I = -3A DS D R ... See More ⇒
8.24. Size:837K cn szxunrui
si2301a.pdf
SOT-23 Plastic-Encapsulate MOSFETS SI2301A SI2301A P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.085 @-4.5V -20V -3.0A 3 0.110 @-2.5V 1.GATE 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit Lead free product is acquired Surface mount package A1 w APPLICATION Load Switch for Portable Devices DC/DC Converter... See More ⇒
8.25. Size:809K cn szxunrui
si2301.pdf
SOT-23 Plastic-Encapsulate MOSFETS SI2301 SI2301 P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.100 @-4.5V -20V -2.8A 3 0.130 @-2.5V 1.GATE 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit Lead free product is acquired Surface mount package - A1sHB w APPLICATION Load Switch for Portable Devices DC/DC Conv... See More ⇒
8.26. Size:2897K cn puolop
si2301a.pdf
SI2301A 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3.0A 110m RDS(ON), Vgs@-2.5V, Ids@-2.0A 140m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.3... See More ⇒
8.27. Size:2196K cn puolop
si2301.pdf
SI2301 -20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.3A 130m RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23 G S Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.80 3.00 G 1.80 2.00 B 2.30 2.50 H 0.90 1.1 C 1.20 ... See More ⇒
8.28. Size:1356K cn yongyutai
si2301.pdf
SI2301 SOT-23 (SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P MOS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage -20 V BV DSS - Gate- Source Voltage +10 V V GS - Drain Current (continuous) I -2.2... See More ⇒
8.29. Size:607K cn alj
si2301.pdf
SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20V(D-S) MOSFET Features V = -20V, I = -2.5A DS D R ... See More ⇒
8.30. Size:2248K cn twgmc
si2301.pdf
SI2301 SI2305 AO3401 SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V( D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit A1SHB A09T A19T 1.GATE 2.SOURCE 3.DRAIN Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Sourc... See More ⇒
8.31. Size:893K cn vbsemi
si2301ads-t1.pdf
SI2301ADS-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒
8.32. Size:866K cn vbsemi
si2301bds-t1-ge3.pdf
SI2301BDS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICA... See More ⇒
8.33. Size:866K cn vbsemi
si2301ds-t1-ge3.pdf
SI2301DS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT... See More ⇒
Detailed specifications: SI1922EDH, SI1926DL, SI1958DH, SI1965DH, SI1967DH, SI1972DH, SI2202, SI2300DS, AON7506, SI2301-TP, SI2302ADS, SI2302ADS-T1, SI2302CDS, SI2302DDS, SI2302-TP, SI2303CDS, SI2304BDS
Keywords - SI2301CDS MOSFET specs
SI2301CDS cross reference
SI2301CDS equivalent finder
SI2301CDS pdf lookup
SI2301CDS substitution
SI2301CDS replacement
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