SI2302CDS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si2302CDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Material categorization:0.057 at VGS = 4.5 V 2.9 For definitions of compliance please see 20 3.50.075 at VGS = 2.5 V www.vishay.com/doc?999122.6APPLICATIONS Load Switching for Portable Devices DC/DC ConverterTO

SI2302CDS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

Si2302CDSVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.057 at VGS = 4.5 V 2.920 3.5RoHS0.075 at VGS = 2.5 V APPLICATIONS2.6COMPLIANT Load Switching for Portable Devices DC/DC ConverterTO-236(SOT-23)G 13 DS 2Top ViewSi2302

SI2302DSN-channel enhancement mode field-effect transistorRev. 02 20 November 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:SI2302DS in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa

Si2302DDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition0.057 at VGS = 4.5 V 2.9 TrenchFET Power MOSFET20 3.50.075 at VGS = 2.5 V 100 % Rg Tested2.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switching for Portable Dev

Si2302DSVishay SiliconixN-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.085 @ VGS = 4.5 V 2.820200.115 @ VGS = 2.5 V 2.4TO-236(SOT-23)G 13 DS 2Top ViewSi2302DS (A2)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VGS "8TA= 25_

Si2302ADSVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 2.4 Compliant to RoHS Directive 2002/95/EC200.115 at VGS = 2.5 V 2.0TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking CodeOrdering Information: Si2302ADS-T1-E3 (

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SI2302Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5VRDS(ON)=82m @VGS=2.5VEnhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliableField Effect Transistor Lead free product is acqu

Si2302ADSVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 2.4 100 % Rg Tested20 Compliant to RoHS Directive 2002/95/EC0.115 at VGS = 2.5 V 2.0TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking CodeOrdering Informatio

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SI2302Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5VRDS(ON)=82m @VGS=2.5VEnhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliableField Effect Transistor Lead free product is acqu

SI2302AFeatures Rugged and Reliable Lead Free Product is Acquired High Dense Cell Design for Extremely Low RDS(ON) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request by Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Field Effect Transistor

SI230220V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSMillimeter MillimeterREF. REF. SOT-23Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30C 1.4

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302AN-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.040 @ VGS = 4.5 V 3.020200.060 @ V 2.0GS = 2.5 V(SOT-23)G 13 DS 2Top View(A2)*SI2302AABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VG

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302N-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.065 @ VGS = 4.5 V 3.020200.090 @ V 2.0GS = 2.5 V(SOT-23-3L)(SOT-23)G 13 DS 2Top ViewSI2302 (A2sHB)*ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Sou

SI2302 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. / Applications

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302 (KI2302)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.1 Features3 VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

RUMW UMW SI2302AUMW SI2302AUMW SI2302AN-Channel Enhancement MOSFET FeaturesSOT23 VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A Marking1. GATE 2. SOURCE G 1 3. DRAIN 3 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20V Gate-Source Voltage VGS 8 Ta=25 2.

RUMW UMW SI2302BUMW SI2302BUMW SI2302BSOT-23 Plastic-Encapsulate MOSFETSN-Channel 20-V(D-S) MOSFET UMW SI2302B SOT23 IDV(BR)DSS RDS(on)MAX 80m@4.5V20V2.5A100m@2.5V1. GATE 2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit A2SHBMaximum rating

SI2302SMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23 -Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch for DC/DC Converter 48m @ 4.5V Switching Circuits 20V 3 A 55m @ 3.3V LED Driver Order Information Mar

SI2302MOSFET ROHSN-Channel Enhancement-Mode MOSFETSOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)Parameter Symbol LimitUnitDrain-Source Voltage VDS 20V Gate-Source Voltage VGS 10Continuous

Plastic-Encapsulate MosfetsFEATURESSI2302High dense cell design for extremely low RDS(ON)N-Channel MOSFETRugged and reliableCase Material: Molded Plastic.Absolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Ratings UnitDrain-Source Voltage VDS 20 VGate-source Voltage VGS 8 V1.Gate2.SourceDrain Current (Continuous) ID 2.1 A SOT-233.DrainaDrai

SI2302SSOT-23 Plastic-Encapsulate MOSFETS20V N-Channel Enhancement Mode MOSFETSOT-23 VDS= 20V 3RDS(ON), Vgs@ 4.5V, Ids@ 2.3A4 8m RDS(ON), Vgs@ 3.3V, Ids@ 2.3A 5 5m 1. GATE 2. SOURCE 13. DRAIN2FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceEquivalent circuitMARKING D A2sHBG S PACKAGE SPE

SI2302SOT-23 Plastic-Encapsulate MOSFETS20V N-Channel Enhancement Mode MOSFETSOT-23 ID MaxV(BR)DSS RDS(on)Typ 328m @ 4.5V 3.0A 20V 1. GATE 32m @ 3.3V 2. SOURCE 13. DRAIN2FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceEquivalent circuitMARKING D A2sHBG S PACKAGE SPECIFICATIONSReel DIA. Q'TY/Ree

www.msksemi.comSI2302AI-MSSemiconductor CompianceGeneral Features V = 20V,I = 3 ADS DR

SOT-23 Plastic-Encapsulate MOSFETSSI2302SI2302 N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.045@ 4.5V320V 3A1.GATE0.055@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2sHB wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter*

SOT-23 Plastic-Encapsulate MOSFETSSI2302AN-Channel 20-V(D-S) MOSFETSI2302AV(BR)DSS RDS(on)MAX IDSOT-230.040@ 4.5V320V 3A1.GATE0.050@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquired Equivalent CircuitMARKINGSurface mount packageA2 wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter*

SI2302 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 4A 45mRDS(ON), Vgs@ 2.5V, Ids@ 3.5A 59m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DSOT-23GSMillimeterMillimeterREF. REF.Min.Max. Min. Max.A 2.80 3.00 G 1.80 2.00B 2.30 2.50 H 0.90 1.1C 1.20 1.4

SI2302N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.050@ 4.5V320V 3A1.GATE0.065@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2ShbAPPLICATIONLoad Switch for Portable DevicesDC/DC ConverterMaximum ratings (Ta=25 unless otherwise not

SI2305SI2301SI2302SI2302SI2302SI2302SI2302 SI2301 Equivalent CircuitMARKING3400RA2SHB34001.GATE2.SOURCE3.DRAIN

SI2302DS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

SI2302ADS-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C