SI2302CDS - описание и поиск аналогов

Si2302CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Material categorization 0.057 at VGS = 4.5 V 2.9 For definitions of compliance please see 20 3.5 0.075 at VGS = 2.5 V www.vishay.com/doc?99912 2.6 APPLICATIONS Load Switching for Portable Devices DC/DC Converter TO

SI2302CDS-T1-GE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/

Si2302CDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.057 at VGS = 4.5 V 2.9 20 3.5 RoHS 0.075 at VGS = 2.5 V APPLICATIONS 2.6 COMPLIANT Load Switching for Portable Devices DC/DC Converter TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302

SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability SI2302DS in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa

Si2302DDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition 0.057 at VGS = 4.5 V 2.9 TrenchFET Power MOSFET 20 3.5 0.075 at VGS = 2.5 V 100 % Rg Tested 2.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching for Portable Dev

Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 20 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VGS "8 TA= 25_

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.060 at VGS = 4.5 V 2.4 Compliant to RoHS Directive 2002/95/EC 20 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Information Si2302ADS-T1-E3 (

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2302 Phone (818) 701-4933 Fax (818) 701-4939 Features N-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5V RDS(ON)=82m @VGS=2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor Lead free product is acqu

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.060 at VGS = 4.5 V 2.4 100 % Rg Tested 20 Compliant to RoHS Directive 2002/95/EC 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Informatio

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2302 Phone (818) 701-4933 Fax (818) 701-4939 Features N-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5V RDS(ON)=82m @VGS=2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor Lead free product is acqu

SI2302A Features Rugged and Reliable Lead Free Product is Acquired High Dense Cell Design for Extremely Low RDS(ON) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free Available Upon Request by Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Field Effect Transistor

SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S Millimeter Millimeter REF. REF. SOT-23 Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.4

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302A N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 3.0 20 20 0.060 @ V 2.0 GS = 2.5 V (SOT-23) G 1 3 D S 2 Top View (A2)* SI2302A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VG

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302 N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.0 20 20 0.090 @ V 2.0 GS = 2.5 V (SOT-23-3L) (SOT-23) G 1 3 D S 2 Top View SI2302 (A2sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Sou

SI2302 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON) Super high dense cell design for low RDS(ON),SOT-23 package. / Applications

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302 (KI2302) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 Features 3 VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

R UMW UMW SI2302A UMW SI2302A UMW SI2302A N-Channel Enhancement MOSFET Features SOT 23 VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A Marking 1. GATE 2. SOURCE G 1 3. DRAIN 3 D S 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Ta=25 2.

R UMW UMW SI2302B UMW SI2302B UMW SI2302B SOT-23 Plastic-Encapsulate MOSFETS N-Channel 20-V(D-S) MOSFET UMW SI2302B SOT 23 ID V(BR)DSS RDS(on)MAX 80 m @4.5V 20V 2.5A 100m @2.5V 1. GATE 2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit A2SHB Maximum rating

SI2302S MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch for DC/DC Converter 48m @ 4.5V Switching Circuits 20V 3 A 55m @ 3.3V LED Driver Order Information Mar

SI2302 MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 10 Continuous

Plastic-Encapsulate Mosfets FEATURES SI2302 High dense cell design for extremely low RDS(ON) N-Channel MOSFET Rugged and reliable Case Material Molded Plastic. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-source Voltage VGS 8 V 1.Gate 2.Source Drain Current (Continuous) ID 2.1 A SOT-23 3.Drain a Drai

SI2302S SOT-23 Plastic-Encapsulate MOSFETS 20V N-Channel Enhancement Mode MOSFET SOT-23 VDS= 20V 3 RDS(ON), Vgs@ 4.5V, Ids@ 2.3A 4 8m RDS(ON), Vgs@ 3.3V, Ids@ 2.3A 5 5m 1. GATE 2. SOURCE 1 3. DRAIN 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Equivalent circuit MARKING D A2sHB G S PACKAGE SPE

SI2302 SOT-23 Plastic-Encapsulate MOSFETS 20V N-Channel Enhancement Mode MOSFET SOT-23 ID Max V(BR)DSS RDS(on)Typ 3 28m @ 4.5V 3.0A 20V 1. GATE 32m @ 3.3V 2. SOURCE 1 3. DRAIN 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Equivalent circuit MARKING D A2sHB G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Ree

www.msksemi.com SI2302AI-MS Semiconductor Compiance General Features V = 20V,I = 3 A DS D R

SOT-23 Plastic-Encapsulate MOSFETS SI2302 SI2302 N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.045 @ 4.5V 3 20V 3A 1.GATE 0.055 @ 2.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired MARKING Equivalent Circuit Surface mount package A2sHB w APPLICATION Load Switch for Portable Devices DC/DC Converter *

SOT-23 Plastic-Encapsulate MOSFETS SI2302A N-Channel 20-V(D-S) MOSFET SI2302A V(BR)DSS RDS(on)MAX ID SOT-23 0.040 @ 4.5V 3 20V 3A 1.GATE 0.050 @ 2.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired Equivalent Circuit MARKING Surface mount package A2 w APPLICATION Load Switch for Portable Devices DC/DC Converter *

SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 4A 45m RDS(ON), Vgs@ 2.5V, Ids@ 3.5A 59m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23 G S Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.80 3.00 G 1.80 2.00 B 2.30 2.50 H 0.90 1.1 C 1.20 1.4

SI2302 N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.050 @ 4.5V 3 20V 3A 1.GATE 0.065 @ 2.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired MARKING Equivalent Circuit Surface mount package A2Shb APPLICATION Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25 unless otherwise not

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate MOSFETS SI2302 N-Channel 20V(D-S) MOSFET Features V = 20V, I = 2.5A DS D R

SI2305 SI2301 SI2302 SI2302 SI2302 SI2302 SI2302 SI2301 Equivalent Circuit MARKING 3400 R A2SHB 3400 1.GATE 2.SOURCE 3.DRAIN

SI2302DS-T1-GE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

SI2302ADS-T1 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C