SI2309CDS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI2309CDS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 28 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.345 Ohm
   Paquete / Cubierta: SOT-23

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SI2309CDS Datasheet (PDF)

..1. Size:202K vishay
si2309cds.pdf

New ProductSi2309CDSVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.345 at VGS = - 10 V - 1.6- 60 2.7 nC0.450 at VGS = - 4.5 V - 1.4APPLICATIONS Load SwitchTO-236(SOT-23)G 13 DSS 2GTop ViewSi2309CDS (N9)** Marking CodeDO

0.1. Size:2454K cn vbsemi
si2309cds-t1-ge3.pdf

SI2309CDS-T1-GE3www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.04RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dyn

6.1. Size:199K vishay
si2309cd.pdf

8.1. Size:92K vishay
si2309ds.pdf

Si2309DSVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY VDS (V) rDS(on) ()ID (A)Pb-free0.340 at VGS = - 10 V - 1.25 Available- 600.550 at VGS = - 4.5 V - 1 RoHS*COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2309DS (A9)** Marking CodeOrdering Information: Si2309DS-T1Si2309DS-T1-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot

8.2. Size:302K shenzhen
si2309.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2309P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY VDS (V) rDS(on) ()ID (A)Pb-free0.340 at VGS = - 10 V - 1.25 Available- 600.550 at VGS = - 4.5 V - 1 RoHS*COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Volta

8.3. Size:1712K kexin
si2309ds.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2309DS (KI2309DS)SOT-23Unit: mm+0.1 Features 2.9-0.1+0.10.4 -0.1 VDS (V) =-60V3 ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V) RDS(ON) 550m (VGS =-4.5V)1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Pa

8.4. Size:1754K kexin
si2309ds-3.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2309DS (KI2309DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-60V ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V)1 2+0.02+0.1 RDS(ON) 550m (VGS =-4.5V)0.15 -0.020.95-0.1+0.11.9-0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta =

8.5. Size:1937K umw-ic
si2309a.pdf

R UMW UMW SI2309ASOT-23-3L Plastic-Encapsulate MOSFETS Features VDS (V) =-60VSOT23 ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V) RDS(ON) 550m (VGS =-4.5V) Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish1. GATE 2. SOURCE 3. DRAIN MARKINGEquivalent Circuit D G S Absolute Maximum Ratings

8.6. Size:1556K born
si2309.pdf

SI2309MOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=-10V -5V Logic Level Control P Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch 150m @ 10V Switching Circuits -60V -2A High Speed line Driver 200m @ 4.5V Order Information Marking Product

8.7. Size:2087K cn vbsemi
si2309ds.pdf

SI2309DSwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.04RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV/

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