SI2309CDS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI2309CDS
Маркировка: N9
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 1.2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 1.6 nC
Время нарастания (tr): 35 ns
Выходная емкость (Cd): 28 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.345 Ohm
Тип корпуса: SOT-23
SI2309CDS Datasheet (PDF)
si2309cds.pdf
New ProductSi2309CDSVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.345 at VGS = - 10 V - 1.6- 60 2.7 nC0.450 at VGS = - 4.5 V - 1.4APPLICATIONS Load SwitchTO-236(SOT-23)G 13 DSS 2GTop ViewSi2309CDS (N9)** Marking CodeDO
si2309cds-t1-ge3.pdf
SI2309CDS-T1-GE3www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.04RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dyn
si2309cd.pdf
New ProductSi2309CDSVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.345 at VGS = - 10 V - 1.6- 60 2.7 nC0.450 at VGS = - 4.5 V - 1.4APPLICATIONS Load SwitchTO-236(SOT-23)G 13 DSS 2GTop ViewSi2309CDS (N9)** Marking CodeDO
si2309ds.pdf
Si2309DSVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY VDS (V) rDS(on) ()ID (A)Pb-free0.340 at VGS = - 10 V - 1.25 Available- 600.550 at VGS = - 4.5 V - 1 RoHS*COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2309DS (A9)** Marking CodeOrdering Information: Si2309DS-T1Si2309DS-T1-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot
si2309.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2309P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY VDS (V) rDS(on) ()ID (A)Pb-free0.340 at VGS = - 10 V - 1.25 Available- 600.550 at VGS = - 4.5 V - 1 RoHS*COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Volta
si2309ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2309DS (KI2309DS)SOT-23Unit: mm+0.1 Features 2.9-0.1+0.10.4 -0.1 VDS (V) =-60V3 ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V) RDS(ON) 550m (VGS =-4.5V)1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Pa
si2309ds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2309DS (KI2309DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-60V ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V)1 2+0.02+0.1 RDS(ON) 550m (VGS =-4.5V)0.15 -0.020.95-0.1+0.11.9-0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta =
si2309a.pdf
R UMW UMW SI2309ASOT-23-3L Plastic-Encapsulate MOSFETS Features VDS (V) =-60VSOT23 ID =-1.25 A (VGS =-10V) RDS(ON) 340m (VGS =-10V) RDS(ON) 550m (VGS =-4.5V) Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish1. GATE 2. SOURCE 3. DRAIN MARKINGEquivalent Circuit D G S Absolute Maximum Ratings
si2309.pdf
SI2309MOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=-10V -5V Logic Level Control P Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch 150m @ 10V Switching Circuits -60V -2A High Speed line Driver 200m @ 4.5V Order Information Marking Product
si2309ds.pdf
SI2309DSwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.04RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV/
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