SI2316DS Todos los transistores

 ..1. Size:205K  vishay
 si2316ds.pdf

Si2316DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFET 0.050 at VGS = 10 V 3.4 Available 30 0.085 at VGS = 4.5 V 2.6 RoHS* APPLICATIONS COMPLIANT Battery Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2316DS (C6)* * Marking Code Ordering I

 8.1. Size:212K  vishay
 si2316bd.pdf

Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ) Definition TrenchFET Power MOSFET 0.050 at VGS = 10 V 4.5 30 3.16 nC PWM Optimized 0.080 at VGS = 4.5 V 3.4 100 % Rg tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Battery Switch

 8.2. Size:216K  vishay
 si2316bds.pdf

Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ) Definition TrenchFET Power MOSFET 0.050 at VGS = 10 V 4.5 30 3.16 nC PWM Optimized 0.080 at VGS = 4.5 V 3.4 100 % Rg tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Battery Switch

 9.1. Size:222K  vishay
 si2319cd.pdf

Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.077 at VGS = - 10 V - 4.4 - 40 7 nC 100 % Rg Tested 0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC

 9.2. Size:230K  vishay
 si2318cd.pdf

New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.042 at VGS = 10 V TrenchFET Power MOSFET 5.6 40 2.9 nC 100 % Rg Tested 0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converte

 9.3. Size:225K  vishay
 si2319cds.pdf

Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.077 at VGS = - 10 V - 4.4 - 40 7 nC 100 % Rg Tested 0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC

 9.4. Size:126K  vishay
 si2312cds.pdf

New Product Si2312CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.0318 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.0356 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.0414 at VGS = 1.8 V 5.6 APPLI

 9.5. Size:187K  vishay
 si2319ds.pdf

Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)b Available 0.082 at VGS = - 10 V TrenchFET Power MOSFET - 3.0 - 40 0.130 at VGS = - 4.5 V - 2.4 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319DS (C9)* *Marking Code Ordering Informati

 9.6. Size:187K  vishay
 si2314ed.pdf

Si2314EDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.033 at VGS = 4.5 V 4.9 TrenchFET Power MOSFET 0.040 at VGS = 2.5 V 20 4.4 ESD Protected 3000 V 0.051 at VGS = 1.8 V 3.9 APPLICATIONS LI-lon Battery Protection TO-236 D (SOT-23) G 1 3 D 3

 9.7. Size:206K  vishay
 si2315bds.pdf

Si2315BDS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 1.8 V Rated 0.050 at VGS = - 4.5 V - 3.85 Available 0.065 at VGS = - 2.5 V - 12 - 3.4 RoHS* COMPLIANT 0.100 at VGS = - 1.8V - 2.7 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2315BDS *(M5) *

 9.8. Size:213K  vishay
 si2312bds.pdf

Si2312BDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.031 at VGS = 4.5 V 5.0 TrenchFET Power MOSFET 20 0.037 at VGS = 2.5 V 4.6 7.5 100 % Rg Tested 0.047 at VGS = 1.8 V 4.1 Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2

 9.9. Size:185K  vishay
 si2318ds.pdf

Si2318DS Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.045 at VGS = 10 V 3.9 TrenchFET Power MOSFET 40 0.058 at VGS = 4.5 V 3.5 APPLICATIONS Stepper Motors Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2318DS( C8)* *Marking Code Ordering

 9.10. Size:89K  vishay
 si2314eds.pdf

Si2314EDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D ESD Protected 3000 V D RoHS Compliant Pb-free 0.033 @ VGS = 4.5 V 4.9 Available APPLICATIONS 0.040 @ VGS = 2.5 V 4.4 20 0.051 @ VGS = 1.8 V 3.9 D LI-lon Battery Protection D TO-236 (SOT-23) G 1 3 D 3 kW G S 2 Top View Si2314EDS (C4)* S

 9.11. Size:236K  vishay
 si2318cds.pdf

New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.042 at VGS = 10 V TrenchFET Power MOSFET 5.6 40 2.9 nC 100 % Rg Tested 0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converte

 9.12. Size:208K  vishay
 si2311ds.pdf

Si2311DS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.045 at VGS = - 4.5 V - 3.5 RoHS 0.072 at VGS = - 2.5 V - 8 - 2.8 COMPLIANT APPLICATIONS 0.120 at VGS = - 1.8 V - 2.0 Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2311DS (C1)* * Marki

 9.13. Size:85K  vishay
 si2312ds.pdf

Si2312DS Vishay Siliconix N-Channel 20 -V (D-S) MOSFET FEATURES PRODUCT SUMMARY D 1.8-V Rated D RoHS Compliant VDS (V) rDS(on) (W) ID (A) Qg (Typ) Pb-free 0.033 @ VGS = 4.5 V 4.9 Available 0.040 @ VGS = 2.5 V 4.4 20 11.2 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312DS (C2)* *Marking Code Ordering Information Si2312DS-T1 Si2312DS-T1 E3 (Lead (Pb)-F

 9.14. Size:462K  mcc
 si2310b.pdf

SI2310B Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF" Field Effect Transistor Maximum Ratings Operating Junction Temperature Range -55 C to +150

 9.15. Size:601K  mcc
 si2310a.pdf

SI2310A Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free. Green Device (Note 1) Field Effect Transistor Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Storage

 9.16. Size:900K  mcc
 si2312b.pdf

 9.17. Size:475K  mcc
 si2310.pdf

SI2310 Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF" Field Effect Transistor Maximum Ratings Operating Junction Temperature Range -55 C to +150

 9.18. Size:1882K  htsemi
 si2312.pdf

SI2312 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

 9.19. Size:999K  shenzhen
 si2315.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2315 G 1 3 D S 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an ext

 9.20. Size:304K  shenzhen
 si2312.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2312 PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 20 7.5 0.047 @ VGS = 1.8 V 4.1 (SOT-23) G 1 3 D Ordering Information Si2312 S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V

 9.21. Size:631K  shenzhen
 si2310.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m D Surface Mount Device ID 3A S SOT-23 G Description The MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance,

 9.22. Size:659K  shenzhen
 si2319.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2319 P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)b APPLICATIONS 0.082 @ VGS = -10 V -3.0 -40 40 D Load Switch 0.130 @ VGS = -4.5 V -2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319 (C91T)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

 9.23. Size:1367K  shenzhen
 si2314.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2314 N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 20 0.051 @ VGS = 1.8 V 3.9 (SOT-23) G 1 3 D S 2 Top View Si2314 (AEXT) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V

 9.24. Size:1451K  kexin
 si2318ds-3.pdf

SMD Type MOSFET N-Channel MOSFET SI2318DS (KI2318DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V) 1 2 RDS(ON) 45m (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 58m (VGS = 4.5V) +0.1 1.9 -0.2 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Paramet

 9.25. Size:1696K  kexin
 si2312ds-3.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) 1 2 RDS(ON) 40m (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 51m (VGS = 1.8V) G 1 3 D 1. Gate 2. Source S 2 3. Drain

 9.26. Size:1859K  kexin
 si2319ds.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET SI2319DS (KI2319DS) SOT-23 Unit mm Features +0.1 2.9-0.1 +0.1 0.4 -0.1 VDS (V) =-40V 3 ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 3 D 1.Gate 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Par

 9.27. Size:1794K  kexin
 si2312 ki2312.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312 (KI2312) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) 1 2 RDS(ON) 40m (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 51m (VGS = 1.8V) G 1 3 D 1. Gate 2. Source S 2 3. Drain Abs

 9.28. Size:1896K  kexin
 si2315bds.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-12V 3 ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 65m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V) +0.1 1.9-0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain A

 9.29. Size:1447K  kexin
 si2318ds.pdf

SMD Type MOSFET N-Channel MOSFET SI2318DS (KI2318DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V) RDS(ON) 45m (VGS = 10V) 1 2 +0.1 +0.05 0.95 -0.1 RDS(ON) 58m (VGS = 4.5V) 0.1-0.01 +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Parameter Sy

 9.30. Size:1833K  kexin
 si2314eds.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET SI2314EDS (KI2314EDS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4-0.1 VDS (V) = 20V 3 ID = 4.9 A (VGS = 4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V) 1 2 D +0.1 +0.05 RDS(ON) 51m (VGS = 1.8V) 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 G 1 3 k 1.Gate G 3 D 2.Source 3.Drai

 9.31. Size:1646K  kexin
 si2318cds.pdf

SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) 1 2 RDS(ON) 51m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol

 9.32. Size:1853K  kexin
 si2319ds-3.pdf

 9.33. Size:1519K  kexin
 si2318cds-3.pdf

SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 51m (VGS = 4.5V) 0.95 -0.1 +0.1 1.9 -0.2 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Sy

 9.34. Size:1928K  kexin
 si2315bds-3.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-12V ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) 1 2 RDS(ON) 65m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 100m (VGS =-1.8V) G 1 3 D 1. Gate S 2 2. Source 3. D

 9.35. Size:1833K  kexin
 si2314eds-3.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET SI2314EDS (KI2314EDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 Features 0.4-0.1 3 VDS (V) = 20V ID = 4.9 A (VGS = 4.5V) RDS(ON) 33m (VGS = 4.5V) 1 2 RDS(ON) 40m (VGS = 2.5V) D +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 51m (VGS = 1.8V) +0.1 1.9 -0.2 3 k G G 1 1. Gate 2. Source 3 D 3.

 9.36. Size:1660K  kexin
 si2312ds.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23 Unit mm Features +0.1 2.9-0.1 +0.1 0.4 -0.1 VDS (V) = 20V 3 ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V) 1 2 RDS(ON) 51m (VGS = 1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Abs

 9.37. Size:1938K  umw-ic
 si2318a.pdf

R UMW UMW SI2318A SOT-23-3L Plastic-Encapsulate MOSFETS Features SOT 23 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) RDS(ON) 51m (VGS = 4.5V) Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 1. GATE 2. SOURCE 3. DRAIN MARKING Equivalent Circuit D G S Absolute Maximum Ratings Ta = 2

 9.38. Size:600K  umw-ic
 si2310a.pdf

R UMW UMW SI2310A UMW SI2310A UMW SI2310A N-ChanneI Power MOSFET Features SOT 23 Simple Drive Requirement Small Package Outline Surface Mount Device 1. GATE 2. SOURCE 3. DRAIN MARKING D G MS10 S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VD S 60 V GS Gate-Source Voltage V 20 V A Continuous Drain Current

 9.39. Size:1799K  umw-ic
 si2312a.pdf

R UMW UMW SI2312A UMW SI2312A Features SOT 23 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V) RDS(ON) 51m (VGS = 1.8V) 1. GATE MARKING 2. SOURCE 3. DRAIN G 1 A12T 3 D S 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate

 9.40. Size:668K  umw-ic
 si2319.pdf

R UMW UMW SI2319 SOT-23 Plastic-Encapsulate MOSFETS SI2319 P-Channel 40-V(D-S) MOSEFET V(BR)DSS RDS(on)MAX ID 45m @ - 10V - 40 V - 4.4A 65m @ - 4.5V FEATURE TrenchFET Power MOSFET SOT 23 Low RDS(ON) Surface Mount Package APPLICATION Load Switch for Portable Devices DC/DC Converter Battery Switch 1. GATE 2. SOURCE MARKING 3. DRAIN Equiva

 9.41. Size:3066K  born
 si2310.pdf

SI2310 MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability MAXIMUM RANTINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 16 Drain Current (Note 1) ID 3.8 A Power Dissipation (N

 9.42. Size:752K  mdd
 si2310.pdf

SI2310 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V N-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 105m @10V 1. GATE 3A 60V 2. SOURCE 125m @4.5V 1 3. DRAIN 2 DESCRIPTION The SI2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery prote

 9.43. Size:1164K  cn puolop
 si2312.pdf

SI2312 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

 9.44. Size:615K  cn puolop
 si2310.pdf

SI2310 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

 9.45. Size:876K  cn vbsemi
 si2312cds-t1-ge3.pdf

SI2312CDS-T1-GE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/

 9.46. Size:907K  cn vbsemi
 si2312bds-t1.pdf

SI2312BDS-T1 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C

 9.47. Size:905K  cn vbsemi
 si2310.pdf

SI2310 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1

 9.48. Size:848K  cn vbsemi
 si2318ds-t1-ge3.pdf

SI2318DS-T1-GE3 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT

 9.49. Size:907K  cn vbsemi
 si2314eds.pdf

SI2314EDS www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conv

 9.50. Size:866K  cn vbsemi
 si2319cds-t1-ge3.pdf

SI2319CDS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter

 9.51. Size:866K  cn vbsemi
 si2319ds-t1-ge3.pdf

SI2319DS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter

 9.52. Size:848K  cn vbsemi
 si2318cds-t1-ge3.pdf

SI2318CDS-T1-GE3 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SO

 9.53. Size:1476K  cn vbsemi
 si2312ds.pdf

SI2312DS www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conve

 9.54. Size:275K  inchange semiconductor
 si2315bds.pdf

isc P-Channel MOSFET Transistor Si2315BDS FEATURES Static drain-source on-resistance R 52m @V = -4.5V; I = -3.8A DS(on) GS D Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications