SI2365EDS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI2365EDS
   Código: P6
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   trⓘ - Tiempo de subida: 21000 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: SOT-23

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SI2365EDS Datasheet (PDF)

..1. Size:244K vishay
si2365eds.pdf

New ProductSi2365EDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Built-in ESD Protection 0.0320 at VGS = - 4.5 V - 5.9- Typical ESD Performance 3000 V0.0410 at VGS = - 2.5 V - 5.2 13.8 nC- 20 Material categorization:0.0675 at VGS = - 1.8 V - 4.

9.1. Size:236K vishay
si2367ds.pdf

New ProductSi2367DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.066 at VGS = - 4.5 V - 3.8 TrenchFET Power MOSFET- 20 0.086 at VGS = - 2.5 V - 3.3 9 nC 100 % Rg Tested0.130 at VGS = - 1.8 V - 2.7 Compliant to RoHS Directive 2002/95/ECT

9.2. Size:237K vishay
si2369ds.pdf

Si2369DSVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Material categorization:0.029 at VGS = - 10 V - 7.6For definitions of compliance please see0.034 at VGS = - 6 V - 7 11.4 nC- 30 www.vishay.com/doc?999120.040 at VGS = - 4.5 V - 6.5APPLICATIONS

9.3. Size:238K vishay
si2366ds.pdf

New ProductSi2366DSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 5.8 TrenchFET Power MOSFET30 3.2 nC 100 % Rg Tested0.042 at VGS = 4.5 V 5.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converters,

9.4. Size:2172K kexin
si2369ds.pdf

SMD Type MOSFETP-Channel MOSFET SI2369DS (KI2369DS)SOT-23Unit: mm Features+0.12.9 -0.1+0.10.4 -0.1 VDS (V) =-30V3 ID =-7.6A (VGS =20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) RDS(ON) 40m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta

9.5. Size:1503K kexin
si2366ds.pdf

SMD Type MOSFETN-Channel MOSFETSI2366DS (KI2366DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2+0.1+0.050.95 -0.1 RDS(ON) 36m (VGS = 10V) 0.1 -0.01+0.11.9 -0.1 RDS(ON) 42m (VGS = 4.5V)1. Gate2. SourceD3. Drain(3)G(1)(2)S Absolute Maximum Ratings Ta = 25Par

9.6. Size:2183K kexin
si2369ds-3.pdf

SMD Type MOSFETP-Channel MOSFET SI2369DS (KI2369DS)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-30V3 ID =-7.6A (VGS =20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V)1 2 RDS(ON) 40m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.21. Gate2. Source3. Drain Absolute Maximum Rating

9.7. Size:1643K kexin
si2366ds-3.pdf

SMD Type MOSFETN-Channel MOSFETSI2366DS (KI2366DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 36m (VGS = 10V)+0.11.9 -0.2 RDS(ON) 42m (VGS = 4.5V)1. Gate2. SourceD3. Drain(3)G(1)(2)S Absolute Maximum Ratings Ta = 25

9.8. Size:905K cn vbsemi
si2369ds-t1.pdf

SI2369DS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

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