SI2365EDS MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2365EDS
Marking Code: P6
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 21000 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOT-23
SI2365EDS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2365EDS Datasheet (PDF)
si2365eds.pdf
New ProductSi2365EDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Built-in ESD Protection 0.0320 at VGS = - 4.5 V - 5.9- Typical ESD Performance 3000 V0.0410 at VGS = - 2.5 V - 5.2 13.8 nC- 20 Material categorization:0.0675 at VGS = - 1.8 V - 4.
si2367ds.pdf
New ProductSi2367DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.066 at VGS = - 4.5 V - 3.8 TrenchFET Power MOSFET- 20 0.086 at VGS = - 2.5 V - 3.3 9 nC 100 % Rg Tested0.130 at VGS = - 1.8 V - 2.7 Compliant to RoHS Directive 2002/95/ECT
si2369ds.pdf
Si2369DSVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Material categorization:0.029 at VGS = - 10 V - 7.6For definitions of compliance please see0.034 at VGS = - 6 V - 7 11.4 nC- 30 www.vishay.com/doc?999120.040 at VGS = - 4.5 V - 6.5APPLICATIONS
si2366ds.pdf
New ProductSi2366DSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 5.8 TrenchFET Power MOSFET30 3.2 nC 100 % Rg Tested0.042 at VGS = 4.5 V 5.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converters,
si2369ds.pdf
SMD Type MOSFETP-Channel MOSFET SI2369DS (KI2369DS)SOT-23Unit: mm Features+0.12.9 -0.1+0.10.4 -0.1 VDS (V) =-30V3 ID =-7.6A (VGS =20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) RDS(ON) 40m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta
si2366ds.pdf
SMD Type MOSFETN-Channel MOSFETSI2366DS (KI2366DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2+0.1+0.050.95 -0.1 RDS(ON) 36m (VGS = 10V) 0.1 -0.01+0.11.9 -0.1 RDS(ON) 42m (VGS = 4.5V)1. Gate2. SourceD3. Drain(3)G(1)(2)S Absolute Maximum Ratings Ta = 25Par
si2369ds-3.pdf
SMD Type MOSFETP-Channel MOSFET SI2369DS (KI2369DS)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-30V3 ID =-7.6A (VGS =20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V)1 2 RDS(ON) 40m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.21. Gate2. Source3. Drain Absolute Maximum Rating
si2366ds-3.pdf
SMD Type MOSFETN-Channel MOSFETSI2366DS (KI2366DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 36m (VGS = 10V)+0.11.9 -0.2 RDS(ON) 42m (VGS = 4.5V)1. Gate2. SourceD3. Drain(3)G(1)(2)S Absolute Maximum Ratings Ta = 25
si2369ds-t1.pdf
SI2369DS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT
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