SI3443CDV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si3443CDVVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.7 PWM Optimized0.084 at VGS = - 2.7 V - 3.9 7.53 nC 100 % Rg Tested- 20 Compliant to RoHS Directive 2002/95/EC0.100 at VGS = -

New ProductSi3443CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.7 PWM Optimized0.084 at VGS = - 2.7 V - 3.9 7.53 nC- 20 100 % Rg Tested0.100 at VGS = - 2.5 V - 3.4APPLICATIONS HD

PD-95240Si3443DVPbFHEXFET Power MOSFETl Ultra Low On-Resistance A1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065l Lead-FreeTop ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per

PD- 93795ASi3443DVHEXFET Power MOSFET Ultra Low On-ResistanceA1 6D D P-Channel MOSFETVDSS = -20V Surface Mount25DD Available in Tape & Reel -2.5V Rated3 4G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This

April 2001Si3443DVP-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeatures DS(ON) GS DS(ON) GS

Si3443DVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETD 100% Rg Tested0.065 @ VGS = -4.5 V -4.50.090 @ VGS = -2.7 V -3.8-200.100 @ VGS = -2.5 V -3.7TSOP-6(4) STop View1 6(3) G3 mm523 42.85 mm(1, 2, 5, 6) DOrdering Information: Si3443DV-T1E3 (Lead Free)P-Channel MOSFETABSOL

Si3443BDVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET0.090 at VGS = - 2.7 V 100 % Rg Tested- 20 - 3.8 Compliant to RoHS Directive 2002/95/EC0.100 at VGS = - 2.5 V - 3.7TSOP-6 (4) STop View1 6

Si3443DDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a, e Qg (TYP.) PWM optimized0.047 at VGS = -4.5 V -4 100 % Rg tested-20 0.080 at VGS = -2.7 V -4 9 nC Material categorization: 0.090 at VGS = -2.5 V -4For definitions of compliance please see TSOP-6 Singlew

PD- 93795BSi3443DVHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area