SI3443CDV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI3443CDV
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 132 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TSOP-6

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SI3443CDV Datasheet (PDF)

..1. Size:205K vishay
si3443cdv.pdf

Si3443CDVVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.7 PWM Optimized0.084 at VGS = - 2.7 V - 3.9 7.53 nC 100 % Rg Tested- 20 Compliant to RoHS Directive 2002/95/EC0.100 at VGS = -

6.1. Size:191K vishay
si3443cd.pdf

New ProductSi3443CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.7 PWM Optimized0.084 at VGS = - 2.7 V - 3.9 7.53 nC- 20 100 % Rg Tested0.100 at VGS = - 2.5 V - 3.4APPLICATIONS HD

8.1. Size:109K 1
si3443dvpbf.pdf

PD-95240Si3443DVPbFHEXFET Power MOSFETl Ultra Low On-Resistance A1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065l Lead-FreeTop ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per

8.2. Size:93K international rectifier
si3443dv.pdf

PD- 93795ASi3443DVHEXFET Power MOSFET Ultra Low On-ResistanceA1 6D D P-Channel MOSFETVDSS = -20V Surface Mount25DD Available in Tape & Reel -2.5V Rated3 4G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This

8.3. Size:109K fairchild semi
si3443dv.pdf

April 2001Si3443DVP-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeatures DS(ON) GS DS(ON) GS

8.4. Size:68K vishay
si3443dv.pdf

Si3443DVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETD 100% Rg Tested0.065 @ VGS = -4.5 V -4.50.090 @ VGS = -2.7 V -3.8-200.100 @ VGS = -2.5 V -3.7TSOP-6(4) STop View1 6(3) G3 mm523 42.85 mm(1, 2, 5, 6) DOrdering Information: Si3443DV-T1E3 (Lead Free)P-Channel MOSFETABSOL

8.5. Size:200K vishay
si3443bdv.pdf

Si3443BDVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET0.090 at VGS = - 2.7 V 100 % Rg Tested- 20 - 3.8 Compliant to RoHS Directive 2002/95/EC0.100 at VGS = - 2.5 V - 3.7TSOP-6 (4) STop View1 6

8.6. Size:240K vishay
si3443ddv.pdf

Si3443DDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a, e Qg (TYP.) PWM optimized0.047 at VGS = -4.5 V -4 100 % Rg tested-20 0.080 at VGS = -2.7 V -4 9 nC Material categorization: 0.090 at VGS = -2.5 V -4For definitions of compliance please see TSOP-6 Singlew

8.7. Size:128K vishay
si3443dvtr.pdf

PD- 93795BSi3443DVHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area

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