SI3443CDV
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3443CDV
Marking Code: AL*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 4.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.7
nC
trⓘ - Rise Time: 59
nS
Cossⓘ -
Output Capacitance: 132
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
TSOP-6
SI3443CDV
Datasheet (PDF)
..1. Size:205K vishay
si3443cdv.pdf 
Si3443CDVVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.7 PWM Optimized0.084 at VGS = - 2.7 V - 3.9 7.53 nC 100 % Rg Tested- 20 Compliant to RoHS Directive 2002/95/EC0.100 at VGS = -
6.1. Size:191K vishay
si3443cd.pdf
New ProductSi3443CDVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.7 PWM Optimized0.084 at VGS = - 2.7 V - 3.9 7.53 nC- 20 100 % Rg Tested0.100 at VGS = - 2.5 V - 3.4APPLICATIONS HD
8.1. Size:109K 1
si3443dvpbf.pdf
PD-95240Si3443DVPbFHEXFET Power MOSFETl Ultra Low On-Resistance A1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065l Lead-FreeTop ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per
8.2. Size:93K international rectifier
si3443dv.pdf
PD- 93795ASi3443DVHEXFET Power MOSFET Ultra Low On-ResistanceA1 6D D P-Channel MOSFETVDSS = -20V Surface Mount25DD Available in Tape & Reel -2.5V Rated3 4G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This
8.3. Size:109K fairchild semi
si3443dv.pdf
April 2001Si3443DVP-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeatures DS(ON) GS DS(ON) GS
8.4. Size:68K vishay
si3443dv.pdf
Si3443DVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETD 100% Rg Tested0.065 @ VGS = -4.5 V -4.50.090 @ VGS = -2.7 V -3.8-200.100 @ VGS = -2.5 V -3.7TSOP-6(4) STop View1 6(3) G3 mm523 42.85 mm(1, 2, 5, 6) DOrdering Information: Si3443DV-T1E3 (Lead Free)P-Channel MOSFETABSOL
8.5. Size:200K vishay
si3443bdv.pdf
Si3443BDVVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET0.090 at VGS = - 2.7 V 100 % Rg Tested- 20 - 3.8 Compliant to RoHS Directive 2002/95/EC0.100 at VGS = - 2.5 V - 3.7TSOP-6 (4) STop View1 6
8.6. Size:240K vishay
si3443ddv.pdf
Si3443DDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a, e Qg (TYP.) PWM optimized0.047 at VGS = -4.5 V -4 100 % Rg tested-20 0.080 at VGS = -2.7 V -4 9 nC Material categorization: 0.090 at VGS = -2.5 V -4For definitions of compliance please see TSOP-6 Singlew
8.7. Size:128K vishay
si3443dvtr.pdf
PD- 93795BSi3443DVHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6D Dl P-Channel MOSFETVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell -2.5V Rated34G SRDS(on) = 0.065Top ViewDescriptionThese P-channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area
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