SI3443DDV Todos los transistores

 ..1. Size:240K  vishay
 si3443ddv.pdf

Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a, e Qg (TYP.) PWM optimized 0.047 at VGS = -4.5 V -4 100 % Rg tested -20 0.080 at VGS = -2.7 V -4 9 nC Material categorization 0.090 at VGS = -2.5 V -4 For definitions of compliance please see TSOP-6 Single w

 7.1. Size:109K  1
 si3443dvpbf.pdf

PD-95240 Si3443DVPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 D D l P-Channel MOSFET VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l -2.5V Rated 3 4 G S RDS(on) = 0.065 l Lead-Free Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per

 7.2. Size:93K  international rectifier
 si3443dv.pdf

PD- 93795A Si3443DV HEXFET Power MOSFET Ultra Low On-Resistance A 1 6 D D P-Channel MOSFET VDSS = -20V Surface Mount 2 5 D D Available in Tape & Reel -2.5V Rated 3 4 G S RDS(on) = 0.065 Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This

 7.3. Size:109K  fairchild semi
 si3443dv.pdf

April 2001 Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features DS(ON) GS DS(ON) GS

 7.4. Size:68K  vishay
 si3443dv.pdf

Si3443DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFET D 100% Rg Tested 0.065 @ VGS = -4.5 V -4.5 0.090 @ VGS = -2.7 V -3.8 -20 0.100 @ VGS = -2.5 V -3.7 TSOP-6 (4) S Top View 1 6 (3) G 3 mm 5 2 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information Si3443DV-T1 E3 (Lead Free) P-Channel MOSFET ABSOL

 7.5. Size:128K  vishay
 si3443dvtr.pdf

PD- 93795B Si3443DV HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 D D l P-Channel MOSFET VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l -2.5V Rated 3 4 G S RDS(on) = 0.065 Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area