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SI3455ADV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3455ADV
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TSOP-6
     - Selección de transistores por parámetros

 

SI3455ADV Datasheet (PDF)

 ..1. Size:177K  vishay
si3455adv.pdf pdf_icon

SI3455ADV

Si3455ADVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = - 10 V - 3.5 TrenchFET Power MOSFETs- 300.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(4) S1 63 mm52(3) G3 42.85 mmOrdering Inform

 8.1. Size:84K  vishay
si3455dv.pdf pdf_icon

SI3455ADV

Si3455DVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHS Available0.100 @ VGS = -10 V "3.5 Compliant-30300.190 @ VGS = -4.5 V "2.5(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETOrdering Information: Si3455DV-T1Si3455DV-T

 9.1. Size:85K  fairchild semi
si3457dv.pdf pdf_icon

SI3455ADV

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchilds advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga

 9.2. Size:211K  vishay
si3458bdv.pdf pdf_icon

SI3455ADV

Si3458BDVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET60 3.5 nC 100 % Rg Tested0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Appli

Otros transistores... SI3445DV , SI3446ADV , SI3447BDV , SI3447CDV , SI3451DV , SI3453DV , SI3454ADV , SI3454CDV , 12N60 , SI3456BDV , SI3456CDV , SI3456DDV , SI3457BDV , SI3457CDV , SI3458BDV , SI3459BDV , SI3460DDV .

History: IXTP50N28T

 

 
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