SI3455ADV Todos los transistores

 

SI3455ADV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI3455ADV

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.14 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TSOP-6

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SI3455ADV datasheet

 ..1. Size:177K  vishay
si3455adv.pdf pdf_icon

SI3455ADV

Si3455ADV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = - 10 V - 3.5 TrenchFET Power MOSFETs - 30 0.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View (4) S 1 6 3 mm 5 2 (3) G 3 4 2.85 mm Ordering Inform

 8.1. Size:84K  vishay
si3455dv.pdf pdf_icon

SI3455ADV

Si3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D Lead (Pb)-Free Version is RoHS Available 0.100 @ VGS = -10 V "3.5 Compliant -30 30 0.190 @ VGS = -4.5 V "2.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information Si3455DV-T1 Si3455DV-T

 9.1. Size:85K  fairchild semi
si3457dv.pdf pdf_icon

SI3455ADV

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchild s advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga

 9.2. Size:211K  vishay
si3458bdv.pdf pdf_icon

SI3455ADV

Si3458BDV Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET 60 3.5 nC 100 % Rg Tested 0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Appli

Otros transistores... SI3445DV , SI3446ADV , SI3447BDV , SI3447CDV , SI3451DV , SI3453DV , SI3454ADV , SI3454CDV , 2N7002 , SI3456BDV , SI3456CDV , SI3456DDV , SI3457BDV , SI3457CDV , SI3458BDV , SI3459BDV , SI3460DDV .

 

 

 

 

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