SI3455ADV Datasheet and Replacement
Type Designator: SI3455ADV
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pd ⓘ
- Maximum Power Dissipation: 1.14
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 2.7
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 7
nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TSOP-6
-
MOSFET ⓘ Cross-Reference Search
SI3455ADV Datasheet (PDF)
..1. Size:177K vishay
si3455adv.pdf 
Si3455ADVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = - 10 V - 3.5 TrenchFET Power MOSFETs- 300.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(4) S1 63 mm52(3) G3 42.85 mmOrdering Inform
8.1. Size:84K vishay
si3455dv.pdf
Si3455DVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHS Available0.100 @ VGS = -10 V "3.5 Compliant-30300.190 @ VGS = -4.5 V "2.5(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETOrdering Information: Si3455DV-T1Si3455DV-T
9.1. Size:85K fairchild semi
si3457dv.pdf
April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchilds advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga
9.2. Size:211K vishay
si3458bdv.pdf
Si3458BDVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET60 3.5 nC 100 % Rg Tested0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Appli
9.3. Size:191K vishay
si3457cd.pdf
New ProductSi3457CDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET- 30 5.1 nC0.113 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop View1 63 mm52(3) GMarking Code
9.4. Size:177K vishay
si3459dv.pdf
Si3459DVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.220 at VGS = - 10 V 2.2 TrenchFET Power MOSFET- 600.310 at VGS = - 4.5 V 1.9 Compliant to RoHS Directive 2002/95/ECTSOP-6 Top View1 6 (4) S3 mm 5 2 (3) G3 4 2.85 mm (1, 2, 5, 6
9.5. Size:177K vishay
si3458dv.pdf
Si3458DVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.10 at VGS = 10 V 3.2 TrenchFET Power MOSFET600.13 at VGS = 4.5 V 2.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm
9.6. Size:176K vishay
si3454adv.pdf
Si3454ADVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 10 V 4.5 TrenchFET Power MOSFET300.085 at VGS = 4.5 V 3.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.8
9.7. Size:207K vishay
si3454cdv.pdf
Si3454CDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.050 at VGS = 10 V 4.2 TrenchFET Power MOSFET30 2.6 100 % Rg Tested0.079 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PCTSOP
9.8. Size:208K vishay
si3459bdv.pdf
New ProductSi3459BDVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 60 4.4 nC 100 % Rg Tested0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch
9.9. Size:66K vishay
si3454dv.pdf
Si3454DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.065 @ VGS = 10 V 4.230300.095 @ VGS = 4.5 V 3.4(1, 2, 5, 6) DTSOP-6Top View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3454DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS
9.10. Size:193K vishay
si3456ddv.pdf
New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve
9.11. Size:65K vishay
si3456dv.pdf
Si3456DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.045 @ VGS = 10 V 5.130300.065 @ VGS = 4.5 V 4.3(1, 2, 5, 6) DTSOP-6Top View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3456DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS
9.12. Size:224K vishay
si3453dv.pdf
New ProductSi3453DVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.165 at VGS = - 10 V - 3.4 100 % Rg Tested- 30 2.4 nC0.276 at VGS = - 4.5 V - 2.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Mobil
9.13. Size:182K vishay
si3456bdv.pdf
Si3456BDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.035 at VGS = 10 V 6.0 TrenchFET Power MOSFET300.052 at VGS = 4.5 V 4.9 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.
9.14. Size:190K vishay
si3456cd.pdf
Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1
9.15. Size:205K vishay
si3454cd.pdf
Si3454CDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.050 at VGS = 10 V 4.2 TrenchFET Power MOSFET30 2.6 100 % Rg Tested0.079 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PCTSOP
9.16. Size:191K vishay
si3456cdv.pdf
Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1
9.17. Size:206K vishay
si3459bd.pdf
New ProductSi3459BDVVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.216 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 60 4.4 nC 100 % Rg Tested0.288 at VGS = - 4.5 V - 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch
9.18. Size:209K vishay
si3458bd.pdf
Si3458BDVVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.100 at VGS = 10 V 4.1 TrenchFET Power MOSFET60 3.5 nC 100 % Rg Tested0.128 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Appli
9.19. Size:192K vishay
si3457cdv.pdf
New ProductSi3457CDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET- 30 5.1 nC0.113 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop View1 63 mm52(3) GMarking Code
9.20. Size:181K vishay
si3457bdv.pdf
Si3457BDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFETs- 300.100 at VGS = - 4.5 V - 3.7TSOP-6Top View1 6(4) S3 mm52(3) G3 42.85 mm(1, 2, 5, 6) DOrdering Information: Si3457BDV-T1-E3 (Lead (
9.21. Size:191K vishay
si3456dd.pdf
New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve
9.22. Size:210K vishay
si3451dv.pdf
Si3451DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.115 at VGS = - 4.5 V - 2.8 TrenchFET Power MOSFET- 20 3.2 nC PWM Optimized0.205 at VGS = - 2.5 V - 2.1 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6 Top View (4)
9.23. Size:70K vishay
si3457dv.pdf
Si3457DVVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS( ) (W) ID (A)VDS (V) rDS(on) (W) ID (A)0.065 @ VGS = 10 V "4.330300.100 @ VGS = 4.5 V "3.4(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Sour
9.24. Size:202K onsemi
si3457dv.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.25. Size:862K cn vbsemi
si3456ddv-t1.pdf
SI3456DDV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC
9.26. Size:1441K cn vbsemi
si3457cdv.pdf
SI3457CDVwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-C
Datasheet: SI3445DV
, SI3446ADV
, SI3447BDV
, SI3447CDV
, SI3451DV
, SI3453DV
, SI3454ADV
, SI3454CDV
, K4145
, SI3456BDV
, SI3456CDV
, SI3456DDV
, SI3457BDV
, SI3457CDV
, SI3458BDV
, SI3459BDV
, SI3460DDV
.
History: IXTA200N075T7
| KP737B
| HM4886E
Keywords - SI3455ADV MOSFET datasheet
SI3455ADV cross reference
SI3455ADV equivalent finder
SI3455ADV lookup
SI3455ADV substitution
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