SI3457CDV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI3457CDV
   Código: AT*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 5.1 nC
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm
   Paquete / Cubierta: TSOP-6

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SI3457CDV Datasheet (PDF)

..1. Size:192K vishay
si3457cdv.pdf

New ProductSi3457CDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.074 at VGS = - 10 V - 5.1 TrenchFET Power MOSFET- 30 5.1 nC0.113 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop View1 63 mm52(3) GMarking Code

..2. Size:1441K cn vbsemi
si3457cdv.pdf

SI3457CDVwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-C

6.1. Size:191K vishay
si3457cd.pdf

8.1. Size:85K fairchild semi
si3457dv.pdf

April 2001 Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 4 A, 30 V. RDS(ON) = 50 m @ VGS = 10 V using Fairchilds advanced PowerTrench process. It RDS(ON) = 75 m @ VGS = 4.5 V has been optimized for battery power management applications. Low ga

8.2. Size:181K vishay
si3457bdv.pdf

Si3457BDVVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFETs- 300.100 at VGS = - 4.5 V - 3.7TSOP-6Top View1 6(4) S3 mm52(3) G3 42.85 mm(1, 2, 5, 6) DOrdering Information: Si3457BDV-T1-E3 (Lead (

8.3. Size:70K vishay
si3457dv.pdf

Si3457DVVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS( ) (W) ID (A)VDS (V) rDS(on) (W) ID (A)0.065 @ VGS = 10 V "4.330300.100 @ VGS = 4.5 V "3.4(4) STSOP-6Top View1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Sour

8.4. Size:202K onsemi
si3457dv.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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