SI3467DV Todos los transistores

 

SI3467DV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3467DV
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm
   Paquete / Cubierta: TSOP-6
 

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SI3467DV Datasheet (PDF)

 ..1. Size:181K  vishay
si3467dv.pdf pdf_icon

SI3467DV

Si3467DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFET- 200.094 at VGS = - 4.5 V - 3.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- PC- Game MachineTSOP-6Top View1 6(4)

 9.1. Size:242K  vishay
si3460bdv.pdf pdf_icon

SI3467DV

Si3460BDVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.032 at VGS = 2.5 V 20 8 9 nC0.040 at VGS = 1.8 V 8APPLICATIONS Load Switch for Portable Applica

 9.2. Size:185K  vishay
si3469dv.pdf pdf_icon

SI3467DV

Si3469DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.030 at VGS = - 10 V - 6.7 TrenchFET Power MOSFET- 200.051 at VGS = - 4.5 V - 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PC- Game MachineTSOP-6- Desktop

 9.3. Size:211K  vishay
si3460bd.pdf pdf_icon

SI3467DV

Si3460BDVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.032 at VGS = 2.5 V 20 8 9 nC0.040 at VGS = 1.8 V 8APPLICATIONS Load Switch for Portable Applica

Otros transistores... SI3457BDV , SI3457CDV , SI3458BDV , SI3459BDV , SI3460DDV , SI3460DV , SI3464DV , SI3465DV , RFP50N06 , SI3473CDV , SI3473DV , SI3474DV , SI3476DV , SI3477DV , SI3481DV , SI3483CDV , SI3483DV .

History: 4N65L-TF2-T | IRFG5210 | SQD100N03-3M2L | STP9435 | HM4821

 

 
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