SI3467DV MOSFET Datasheet: P-Ch, 20V, 3.8A. Full specification with pinout and replacement list

SI3467DV Specs and Replacement

Type Designator: SI3467DV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: TSOP-6

SI3467DV substitution

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SI3467DV datasheet

..1. Size:181K vishay
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Si3467DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFET - 20 0.094 at VGS = - 4.5 V - 3.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch - PC - Game Machine TSOP-6 Top View 1 6 (4)... See More ⇒

9.1. Size:242K vishay
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Si3460BDV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = 2.5 V 20 8 9 nC 0.040 at VGS = 1.8 V 8 APPLICATIONS Load Switch for Portable Applica... See More ⇒

9.2. Size:185K vishay
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Si3469DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.030 at VGS = - 10 V - 6.7 TrenchFET Power MOSFET - 20 0.051 at VGS = - 4.5 V - 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch - Notebook PC - Game Machine TSOP-6 - Desktop... See More ⇒

9.3. Size:211K vishay
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