SI3467DV
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3467DV
Marking Code: 7C*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.14
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.7
nC
trⓘ - Rise Time: 15
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054
Ohm
Package:
TSOP-6
SI3467DV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3467DV
Datasheet (PDF)
..1. Size:181K vishay
si3467dv.pdf 
Si3467DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.054 at VGS = - 10 V - 5.0 TrenchFET Power MOSFET- 200.094 at VGS = - 4.5 V - 3.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- PC- Game MachineTSOP-6Top View1 6(4)
9.1. Size:242K vishay
si3460bdv.pdf
Si3460BDVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.032 at VGS = 2.5 V 20 8 9 nC0.040 at VGS = 1.8 V 8APPLICATIONS Load Switch for Portable Applica
9.2. Size:185K vishay
si3469dv.pdf
Si3469DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.030 at VGS = - 10 V - 6.7 TrenchFET Power MOSFET- 200.051 at VGS = - 4.5 V - 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PC- Game MachineTSOP-6- Desktop
9.3. Size:211K vishay
si3460bd.pdf
Si3460BDVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.032 at VGS = 2.5 V 20 8 9 nC0.040 at VGS = 1.8 V 8APPLICATIONS Load Switch for Portable Applica
9.4. Size:231K vishay
si3464dv.pdf
New ProductSi3464DVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.024 at VGS = 4.5 V TrenchFET Power MOSFET8a 100 % Rg Tested20 0.028 at VGS = 2.5 V 8a 11 nC Compliant to RoHS Directive 2002/95/EC0.030 at VGS = 1.8 V 7.1APPLICATIO
9.5. Size:177K vishay
si3460dv.pdf
Si3460DVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.027 at VGS = 4.5 V 6.8 TrenchFET Power MOSFET0.032 at VGS = 2.5 V 20 6.3 100 % Rg Tested0.038 at VGS = 1.8 V 5.7 Compliant to RoHS directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 6
9.6. Size:199K vishay
si3465dv.pdf
Si3465DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = - 10 V - 4.0- 20 TrenchFET Power MOSFET0.170 at VGS = - 4.5 V - 2.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch- Notebook PC- Game MachineTSOP-6Top View(
9.7. Size:612K vishay
si3460dd si3460ddv.pdf
Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL
9.8. Size:612K vishay
si3460ddv.pdf
Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL
9.9. Size:862K cn vbsemi
si3460dv-t1.pdf
SI3460DV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/
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