SI3588DV Todos los transistores

 

SI3588DV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3588DV
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TSOP-6
     - Selección de transistores por parámetros

 

SI3588DV Datasheet (PDF)

 ..1. Size:217K  vishay
 si3588dv.pdf pdf_icon

SI3588DV

Si3588DVVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = 4.5 V 3.0 TrenchFET Power MOSFETs: 1.8 V Rated0.100 at VGS = 2.5 V N-Channel 20 2.6 Compliant to RoHS Directive 2002/95/EC0.128 at VGS = 1.8 V 2.30.145 at VGS = - 4.5 V - 2.20

 9.1. Size:250K  vishay
 si3585cdv.pdf pdf_icon

SI3588DV

Si3585CDVVishay SiliconixN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg Tested0.058 at VGS = 4.5 V 3.9 Material categorization:N-Channel 20 2.9 nCFor definitions of compliance please see 0.078 at VGS = 2.5 V 3.3www.vishay.com/doc?999120.195 at VGS = - 4.5 V - 2.1P

 9.2. Size:207K  vishay
 si3586dv.pdf pdf_icon

SI3588DV

Si3586DVVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 3.4 TrenchFET Power MOSFET0.070 at VGS = 2.5 V Fast Switching In Small FootprintN-Channel 20 3.2 Very Low RDS(on) for Increased Efficiency0.100 at VGS = 1.8 V 2.5

 9.3. Size:958K  cn vbsemi
 si3585dv-t1.pdf pdf_icon

SI3588DV

SI3585DV-T1www.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 a

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AO8803 | FDC3612

 

 
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