SI3588DV - аналоги, параметры транзистора - Справочник транзисторов

SI3588DV даташит

..1. Size:217K vishay
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Si3588DV Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.080 at VGS = 4.5 V 3.0 TrenchFET Power MOSFETs 1.8 V Rated 0.100 at VGS = 2.5 V N-Channel 20 2.6 Compliant to RoHS Directive 2002/95/EC 0.128 at VGS = 1.8 V 2.3 0.145 at VGS = - 4.5 V - 2.2 0

9.1. Size:250K vishay
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Si3585CDV Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested 0.058 at VGS = 4.5 V 3.9 Material categorization N-Channel 20 2.9 nC For definitions of compliance please see 0.078 at VGS = 2.5 V 3.3 www.vishay.com/doc?99912 0.195 at VGS = - 4.5 V - 2.1 P

9.2. Size:207K vishay
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Si3586DV Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.060 at VGS = 4.5 V 3.4 TrenchFET Power MOSFET 0.070 at VGS = 2.5 V Fast Switching In Small Footprint N-Channel 20 3.2 Very Low RDS(on) for Increased Efficiency 0.100 at VGS = 1.8 V 2.5

9.3. Size:958K cn vbsemi
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SI3585DV-T1 www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 a