SI4346DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4346DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: SO-8

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SI4346DY Datasheet (PDF)

..1. Size:228K vishay
si4346dy.pdf

Si4346DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.023 at VGS = 10 V 8 TrenchFET Gen II Power MOSFET0.025 at VGS = 4.5 V 7.5 100 % Rg Tested 30 6.50.030 at VGS = 3.0 V 6.80.036 at VGS = 2.5 V 6.0APPLICATIONS High-Side DC/DC Con

9.1. Size:77K vishay
si4348dy.pdf

Si4348DYNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen II Power MOSFET VDS (V) rDS(on) ()ID (A)Pb-free0.0125 at VGS = 10 V 11APPLICATIONS30RoHS0.014 at VGS = 4.5 V 10COMPLIANT High-Side DC/DC Conversion- Notebook- Desktop- Server Notebook Logic DC/DC, Low-SideSO-8DS1 8 DS D2 7S

9.2. Size:224K vishay
si4340ddy.pdf

Si4340DDYVishay SiliconixDual N-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0085 at VGS = 10 V 14.8 TrenchFET Power MOSFETChannel-1 20 8.10.0115 at VGS = 4.5 V 12.8 100 % Rg Tested0.0070 at VGS = 10 V 22Channel-2 20 8.4 100 % UIS T

9.3. Size:1202K vishay
si4340cd.pdf

Si4340CDYVishay SiliconixDual N-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0094 at VGS = 10 V 14.1 TrenchFET Power MOSFETChannel-1 20 9.60.0125 at VGS = 4.5 V 12.2 100 % Rg Tested0.008 at VGS = 10 V 20Channel-2 20 14.1 100 % UIS Te

9.4. Size:143K vishay
si4340dy.pdf

Si4340DYVishay SiliconixDual N-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.012 at VGS = 10 V 9.6Channel-1 TrenchFET Power MOSFET0.0175 at VGS = 4.5 V 7.8 100 % Rg Tested200.010 at VGS = 10 V 13.5 Compliant to RoHS Directive 2002/95/ECChann

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