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SI4346DY Spec and Replacement


   Type Designator: SI4346DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 11 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SO-8

 SI4346DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4346DY Specs

 ..1. Size:228K  vishay
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SI4346DY

Si4346DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.023 at VGS = 10 V 8 TrenchFET Gen II Power MOSFET 0.025 at VGS = 4.5 V 7.5 100 % Rg Tested 30 6.5 0.030 at VGS = 3.0 V 6.8 0.036 at VGS = 2.5 V 6.0 APPLICATIONS High-Side DC/DC Con... See More ⇒

 9.1. Size:77K  vishay
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SI4346DY

Si4348DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen II Power MOSFET VDS (V) rDS(on) ( )ID (A) Pb-free 0.0125 at VGS = 10 V 11 APPLICATIONS 30 RoHS 0.014 at VGS = 4.5 V 10 COMPLIANT High-Side DC/DC Conversion - Notebook - Desktop - Server Notebook Logic DC/DC, Low-Side SO-8 D S 1 8 D S D 2 7 S ... See More ⇒

 9.2. Size:224K  vishay
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SI4346DY

Si4340DDY Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0085 at VGS = 10 V 14.8 TrenchFET Power MOSFET Channel-1 20 8.1 0.0115 at VGS = 4.5 V 12.8 100 % Rg Tested 0.0070 at VGS = 10 V 22 Channel-2 20 8.4 100 % UIS T... See More ⇒

 9.3. Size:1202K  vishay
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SI4346DY

Si4340CDY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0094 at VGS = 10 V 14.1 TrenchFET Power MOSFET Channel-1 20 9.6 0.0125 at VGS = 4.5 V 12.2 100 % Rg Tested 0.008 at VGS = 10 V 20 Channel-2 20 14.1 100 % UIS Te... See More ⇒

Detailed specifications: SI4276DY , SI4286DY , SI4288DY , SI4320DY , SI4322DY , SI4324DY , SI4336DY , SI4340DDY , AON6414A , SI4354DY , SI4362BDY , SI4368DY , SI4378DY , SI4384DY , SI4386DY , SI4390DY , SI4396DY .

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