All MOSFET. SI4346DY Datasheet

 

SI4346DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4346DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 11 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SO-8

 SI4346DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4346DY Datasheet (PDF)

 ..1. Size:228K  vishay
 si4346dy.pdf

SI4346DY SI4346DY

Si4346DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.023 at VGS = 10 V 8 TrenchFET Gen II Power MOSFET0.025 at VGS = 4.5 V 7.5 100 % Rg Tested 30 6.50.030 at VGS = 3.0 V 6.80.036 at VGS = 2.5 V 6.0APPLICATIONS High-Side DC/DC Con

 9.1. Size:77K  vishay
 si4348dy.pdf

SI4346DY SI4346DY

Si4348DYNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen II Power MOSFET VDS (V) rDS(on) ()ID (A)Pb-free0.0125 at VGS = 10 V 11APPLICATIONS30RoHS0.014 at VGS = 4.5 V 10COMPLIANT High-Side DC/DC Conversion- Notebook- Desktop- Server Notebook Logic DC/DC, Low-SideSO-8DS1 8 DS D2 7S

 9.2. Size:224K  vishay
 si4340ddy.pdf

SI4346DY SI4346DY

Si4340DDYVishay SiliconixDual N-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0085 at VGS = 10 V 14.8 TrenchFET Power MOSFETChannel-1 20 8.10.0115 at VGS = 4.5 V 12.8 100 % Rg Tested0.0070 at VGS = 10 V 22Channel-2 20 8.4 100 % UIS T

 9.3. Size:1202K  vishay
 si4340cd.pdf

SI4346DY SI4346DY

Si4340CDYVishay SiliconixDual N-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0094 at VGS = 10 V 14.1 TrenchFET Power MOSFETChannel-1 20 9.60.0125 at VGS = 4.5 V 12.2 100 % Rg Tested0.008 at VGS = 10 V 20Channel-2 20 14.1 100 % UIS Te

 9.4. Size:143K  vishay
 si4340dy.pdf

SI4346DY SI4346DY

Si4340DYVishay SiliconixDual N-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.012 at VGS = 10 V 9.6Channel-1 TrenchFET Power MOSFET0.0175 at VGS = 4.5 V 7.8 100 % Rg Tested200.010 at VGS = 10 V 13.5 Compliant to RoHS Directive 2002/95/ECChann

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top