SI4396DY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI4396DY  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 71 nS

Cossⓘ - Capacitancia de salida: 410 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: SO-8

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SI4396DY datasheet

 ..1. Size:87K  vishay
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SI4396DY

Si4396DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0115 at VGS = 10 V 16 30 TrenchFET Power MOSFET 13.3 nC 0.016 at VGS = 4.5 V 12.7 100 % Rg and UIS Tested SCHOTTKY AND BODY DIODE PRODUCT APPLICATIONS SUMMARY Noteb

 9.1. Size:93K  vishay
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SI4396DY

Si4392ADY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) Low Switching Losses RoHS 0.0075 at VGS = 10 V 21.5 TrenchFET Power MOSFET COMPLIANT 12 nC 30 100 % Rg Tested 0.0115 at VGS = 4.5 V 17.4 APPLICATIONS High-Side DC/DC Conv

 9.2. Size:239K  vishay
 si4398dy.pdf pdf_icon

SI4396DY

Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0028 at VGS = 10 V 25 20 Extremely Low Qgd for Switching Losses 0.0040 at VGS = 4.5 V 22 Ultra-Low On-Resistance 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APP

 9.3. Size:81K  vishay
 si4394dy.pdf pdf_icon

SI4396DY

Si4394DY New Product Vishay Siliconix N-Channel Reduced Qgd, Fast Switching WFET FEATURES PRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ( )ID (A) Switching Losses RoHS 0.00825 at VGS = 10 V 15 30 TrenchFET Power MOSFET COMPLIANT 0.00975 at VGS = 4.5 V 14 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion - Notebook - S

MOSTRAR MÁS

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