SI4396DY Datasheet. Specs and Replacement

Type Designator: SI4396DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: SO-8

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SI4396DY datasheet

 ..1. Size:87K  vishay
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SI4396DY

Si4396DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0115 at VGS = 10 V 16 30 TrenchFET Power MOSFET 13.3 nC 0.016 at VGS = 4.5 V 12.7 100 % Rg and UIS Tested SCHOTTKY AND BODY DIODE PRODUCT APPLICATIONS SUMMARY Noteb... See More ⇒

 9.1. Size:93K  vishay
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SI4396DY

Si4392ADY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) Low Switching Losses RoHS 0.0075 at VGS = 10 V 21.5 TrenchFET Power MOSFET COMPLIANT 12 nC 30 100 % Rg Tested 0.0115 at VGS = 4.5 V 17.4 APPLICATIONS High-Side DC/DC Conv... See More ⇒

 9.2. Size:239K  vishay
si4398dy.pdf pdf_icon

SI4396DY

Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0028 at VGS = 10 V 25 20 Extremely Low Qgd for Switching Losses 0.0040 at VGS = 4.5 V 22 Ultra-Low On-Resistance 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APP... See More ⇒

 9.3. Size:81K  vishay
si4394dy.pdf pdf_icon

SI4396DY

Si4394DY New Product Vishay Siliconix N-Channel Reduced Qgd, Fast Switching WFET FEATURES PRODUCT SUMMARY Extremely Low Qgd WFET Technology for VDS (V) rDS(on) ( )ID (A) Switching Losses RoHS 0.00825 at VGS = 10 V 15 30 TrenchFET Power MOSFET COMPLIANT 0.00975 at VGS = 4.5 V 14 100 % Rg Tested APPLICATIONS High-Side DC/DC Conversion - Notebook - S... See More ⇒

Detailed specifications: SI4346DY, SI4354DY, SI4362BDY, SI4368DY, SI4378DY, SI4384DY, SI4386DY, SI4390DY, IRF9540, SI4398DY, SI4401BDY, SI4401DDY, SI4401DY, SI4403BDY, SI4403CDY, SI4404DY, SI4406DY

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