SI4482DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4482DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET SI4482DY

SI4482DY Datasheet (PDF)

..1. Size:38K vishay
si4482dy.pdf

Si4482DYVishay SiliconixN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.060 @ VGS = 10 V 4.61001000.080 @ VGS = 6 V 4.0DSO-8SD1 8SD2 7GSD3 6GD4 5Top ViewSOrdering Information: Si4482DYSi4482DY-T1 (with Tape and Reel)N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDr

9.1. Size:250K vishay
si4486ey.pdf

Si4486EYVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 10 V 7.9100 TrenchFET Power MOSFETs0.028 at VGS = 6.0 V 7.5 175 C Maximum Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2

9.2. Size:248K vishay
si4483edy.pdf

Si4483EDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0085 at VGS = - 10 V - 14- 30 TrenchFET Power MOSFET0.014 at VGS = - 4.5 V - 11 ESD Protection: 3000 V APPLICATIONS Notebook PC- Load Switch- Adapter SwitchSSO-8S D1 8S D2 7S D

9.3. Size:231K vishay
si4488dy.pdf

Si4488DYVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.050 at VGS = 10 V 150 5.0 TrenchFET Power MOSFETs Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2 7GS D3 6G D4 5Top ViewSOrdering Information: Si4488DY-T1-E3 (Lead (Pb)-fr

9.4. Size:230K vishay
si4483ady.pdf

Si4483ADYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.0088 at VGS = - 10 V - 19.2 TrenchFET Power MOSFET- 30 44.8 nC0.0153 at VGS = - 4.5 V - 14.6 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

9.5. Size:51K vishay
si4480ey.pdf

Si4480EYVishay SiliconixN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.035 @ VGS = 10 V 6.280800.040 @ VGS = 6.0 V 5.8DSO-8SD1 8SD2 7GSD3 6GD4 5Top ViewSOrdering Information: Si4480EYSi4480EY-T1 (with Tape and Reel)N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDra

9.6. Size:237K vishay
si4487dy.pdf

New ProductSi4487DYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0205 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 12.4 nC 100 % Rg Tested0.0375 at VGS = - 4.5 V - 8.6 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPP

9.7. Size:237K vishay
si4485dy.pdf

Si4485DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.042 at VGS = - 10 V - 6 TrenchFET Power MOSFET- 30 7 nC 100 % Rg Tested0.072 at VGS = - 4.5 V - 6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch Notebook

9.8. Size:227K vishay
si4483ad.pdf

9.9. Size:217K vishay
si4480dy.pdf

Si4480DYVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definiton0.035 at VGS = 10 V 6.0 Compliant to RoHS Directive 2002/95/EC800.040 at VGS = 6.0 V 5.5DSO-8S D1 8S D G2 7S D3 6G D4 5Top ViewSOrdering Information: Si4480DY-T1-E3 (Lead (Pb)-free)N-

9.10. Size:245K vishay
si4483ed.pdf

9.11. Size:240K vishay
si4484ey.pdf

Si4484EYVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.034 at VGS = 10 V 6.9100 TrenchFET Power MOSFETs0.040 at VGS = 6.0 V 6.4 175 C Maximum Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2

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