SI4482DY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI4482DY
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 30 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: SO-8
SI4482DY Datasheet (PDF)
si4482dy.pdf
Si4482DYVishay SiliconixN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.060 @ VGS = 10 V 4.61001000.080 @ VGS = 6 V 4.0DSO-8SD1 8SD2 7GSD3 6GD4 5Top ViewSOrdering Information: Si4482DYSi4482DY-T1 (with Tape and Reel)N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDr
si4486ey.pdf
Si4486EYVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 10 V 7.9100 TrenchFET Power MOSFETs0.028 at VGS = 6.0 V 7.5 175 C Maximum Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2
si4483edy.pdf
Si4483EDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0085 at VGS = - 10 V - 14- 30 TrenchFET Power MOSFET0.014 at VGS = - 4.5 V - 11 ESD Protection: 3000 V APPLICATIONS Notebook PC- Load Switch- Adapter SwitchSSO-8S D1 8S D2 7S D
si4488dy.pdf
Si4488DYVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.050 at VGS = 10 V 150 5.0 TrenchFET Power MOSFETs Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2 7GS D3 6G D4 5Top ViewSOrdering Information: Si4488DY-T1-E3 (Lead (Pb)-fr
si4483ady.pdf
Si4483ADYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.0088 at VGS = - 10 V - 19.2 TrenchFET Power MOSFET- 30 44.8 nC0.0153 at VGS = - 4.5 V - 14.6 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
si4480ey.pdf
Si4480EYVishay SiliconixN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.035 @ VGS = 10 V 6.280800.040 @ VGS = 6.0 V 5.8DSO-8SD1 8SD2 7GSD3 6GD4 5Top ViewSOrdering Information: Si4480EYSi4480EY-T1 (with Tape and Reel)N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDra
si4487dy.pdf
New ProductSi4487DYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0205 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 12.4 nC 100 % Rg Tested0.0375 at VGS = - 4.5 V - 8.6 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPP
si4485dy.pdf
Si4485DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.042 at VGS = - 10 V - 6 TrenchFET Power MOSFET- 30 7 nC 100 % Rg Tested0.072 at VGS = - 4.5 V - 6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch Notebook
si4483ad.pdf
Si4483ADYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.0088 at VGS = - 10 V - 19.2 TrenchFET Power MOSFET- 30 44.8 nC0.0153 at VGS = - 4.5 V - 14.6 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
si4480dy.pdf
Si4480DYVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definiton0.035 at VGS = 10 V 6.0 Compliant to RoHS Directive 2002/95/EC800.040 at VGS = 6.0 V 5.5DSO-8S D1 8S D G2 7S D3 6G D4 5Top ViewSOrdering Information: Si4480DY-T1-E3 (Lead (Pb)-free)N-
si4483ed.pdf
Si4483EDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0085 at VGS = - 10 V - 14- 30 TrenchFET Power MOSFET0.014 at VGS = - 4.5 V - 11 ESD Protection: 3000 V APPLICATIONS Notebook PC- Load Switch- Adapter SwitchSSO-8S D1 8S D2 7S D
si4484ey.pdf
Si4484EYVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.034 at VGS = 10 V 6.9100 TrenchFET Power MOSFETs0.040 at VGS = 6.0 V 6.4 175 C Maximum Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918