SI4491EDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI4491EDY
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.1 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 17.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.8 V
Carga de la puerta (Qg): 29 nC
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 880 pF
Resistencia entre drenaje y fuente RDS(on): 0.0065 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET SI4491EDY
SI4491EDY Datasheet (PDF)
si4491edy.pdf
New ProductSi4491EDYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0065 at VGS = - 10 V - 29 TrenchFET Power MOSFET- 30 0.0082 at VGS = - 6 V - 23 66 nC 100 % Rg and UIS Tested0.0112 at VGS = - 4.5 V - 20
si4493dy.pdf
Si4493DYVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.00775 at VGS = - 4.5 V - 14 TrenchFET Power MOSFET - 200.01225 at VGS = - 2.5 V - 11 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load SwitchSSO-8 S 1 8 D GS D 2 7 S D
si4490dy.pdf
Si4490DYVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = 10 V 4.0 TrenchFET Power MOSFETs2000.090 at VGS = 6.0 V 3.8 Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D G2 7S D3 6G D4 5Top ViewSOrdering Information:
si4497dy.pdf
New ProductSi4497DYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0033 at VGS = - 10 V - 36 TrenchFET Power MOSFET- 30 90 nC 100 % Rg Tested0.0046 at VGS = - 4.5 V - 29 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATI
si4496dy.pdf
Si4496DYVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESD TrenchFETr Power MOSFETD Low Gate ChargePRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.025 @ VGS = 10 V 7.7 D Primary Side Switch1001000.031 @ VGS = 6.0 V 6.9DSO-8SD1 8SD2 7SD3 6GGD4 5Top ViewOrdering Information: Si4496DYSSi4496DY-T1 (with Tape and Reel)
si4490dy.pdf
SMD Type MOSFETN-Channel MOSFETSI4490DY (KI4490DY)SOP-8 Features VDS (V) = 200VD ID = 4A (VGS = 10V)1.50 0.15 RDS(ON) 80m (VGS = 10V) RDS(ON) 90m (VGS = 6V)G 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateS Absolute Maximum Ratings Ta = 25Parameter Symbol 10S Steady State Unit Drain-Source Voltage VDS 200
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
