SI4493DY Datasheet. Equivalente

 ..1. Size:225K  vishay
 si4493dy.pdf

Si4493DY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.00775 at VGS = - 4.5 V - 14 TrenchFET Power MOSFET - 20 0.01225 at VGS = - 2.5 V - 11 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch S SO-8 S 1 8 D G S D 2 7 S D

 9.1. Size:225K  vishay
 si4490dy.pdf

Si4490DY Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.080 at VGS = 10 V 4.0 TrenchFET Power MOSFETs 200 0.090 at VGS = 6.0 V 3.8 Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D G 2 7 S D 3 6 G D 4 5 Top View S Ordering Information

 9.2. Size:122K  vishay
 si4497dy.pdf

New Product Si4497DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.0033 at VGS = - 10 V - 36 TrenchFET Power MOSFET - 30 90 nC 100 % Rg Tested 0.0046 at VGS = - 4.5 V - 29 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATI

 9.3. Size:293K  vishay
 si4491edy.pdf

New Product Si4491EDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switch VDS (V) RDS(on) ( ) Max. applications ID a Qg (Typ.) Extremely low RDS(on) 0.0065 at VGS = - 10 V - 29 TrenchFET Power MOSFET - 30 0.0082 at VGS = - 6 V - 23 66 nC 100 % Rg and UIS Tested 0.0112 at VGS = - 4.5 V - 20

 9.4. Size:64K  vishay
 si4496dy.pdf

Si4496DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Low Gate Charge PRODUCT SUMMARY D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) APPLICATIONS 0.025 @ VGS = 10 V 7.7 D Primary Side Switch 100 100 0.031 @ VGS = 6.0 V 6.9 D SO-8 SD 1 8 SD 2 7 SD 3 6 G GD 4 5 Top View Ordering Information Si4496DY S Si4496DY-T1 (with Tape and Reel)

 9.5. Size:1475K  kexin
 si4490dy.pdf

SMD Type MOSFET N-Channel MOSFET SI4490DY (KI4490DY) SOP-8 Features VDS (V) = 200V D ID = 4A (VGS = 10V) 1.50 0.15 RDS(ON) 80m (VGS = 10V) RDS(ON) 90m (VGS = 6V) G 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate S Absolute Maximum Ratings Ta = 25 Parameter Symbol 10S Steady State Unit Drain-Source Voltage VDS 200