SI4493DY - аналоги, даташиты, параметры транзистора

SI4493DY Datasheet (PDF)

..1. Size:225K vishay
si4493dy.pdf pdf_icon

Si4493DYVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.00775 at VGS = - 4.5 V - 14 TrenchFET Power MOSFET - 200.01225 at VGS = - 2.5 V - 11 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load SwitchSSO-8 S 1 8 D GS D 2 7 S D

9.1. Size:225K vishay
si4490dy.pdf pdf_icon

Si4490DYVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = 10 V 4.0 TrenchFET Power MOSFETs2000.090 at VGS = 6.0 V 3.8 Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D G2 7S D3 6G D4 5Top ViewSOrdering Information:

9.2. Size:122K vishay
si4497dy.pdf pdf_icon

New ProductSi4497DYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0033 at VGS = - 10 V - 36 TrenchFET Power MOSFET- 30 90 nC 100 % Rg Tested0.0046 at VGS = - 4.5 V - 29 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATI

9.3. Size:293K vishay
si4491edy.pdf pdf_icon

New ProductSi4491EDYVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0065 at VGS = - 10 V - 29 TrenchFET Power MOSFET- 30 0.0082 at VGS = - 6 V - 23 66 nC 100 % Rg and UIS Tested0.0112 at VGS = - 4.5 V - 20