SI4532CDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4532CDY Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.047 at VGS = 10 V 6.0 TrenchFET Power MOSFET N-Channel 30 2.75 0.065 at VGS = 4.5 V 5.2 100 % Rg Tested 0.089 at VGS = - 10 V - 4.3 100 % UIS Tested P-Channel - 30 4.1 Compli

Si4532CDY Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.047 at VGS = 10 V 6.0 TrenchFET Power MOSFET N-Channel 30 2.75 0.065 at VGS = 4.5 V 5.2 100 % Rg Tested 0.089 at VGS = - 10 V - 4.3 100 % UIS Tested P-Channel - 30 4.1 Compli

September 1999 Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power N-Channel 3.9A, 30V.RDS(ON) = 0.065 @VGS = 10V field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very RDS(ON) = 0.095 @VGS = 4.5V. high density process

Si4532DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) ID (A) 0.065 @ VGS = 10 V "3.9 N-Channel 30 N-Channel 30 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = 10 V "3.5 P-Channel 30 P-Channel 30 0.19 @ VGS = 4.5 V "2.5 D1 S2 SO-8 S1 1 D1 8 G2 G1 2 D1 7 G1 S2 3 D2 6 G2 4 D2 5 Top View S1 D2 N-Channel MOSFET P-Channel MOSFET

Si4532ADY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.053 at VGS = 10 V 4.9 TrenchFET Power MOSFETs N-Channel 30 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 P-Channel - 30 0.135 at VGS = - 4.5 V - 3.0 S2 D1 SO-8 S1 1 D1 8 G2 G1 2 D1 7

SI4532ADY-T1 www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at