SI4800BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI4800BDY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET SI4800BDY
SI4800BDY Datasheet (PDF)
si4800bdy.pdf
Si4800BDYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0185 at VGS = 10 V 930 TrenchFET Power MOSFET0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5GTop Vi
si4800bd.pdf
Si4800BDYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0185 at VGS = 10 V 930 TrenchFET Power MOSFET0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5GTop Vi
si4800.pdf
SI4800N-channel TrenchMOS logic level FETM3D315Rev. 02 17 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low gate charge Surface mounted package Low on-state resistance Fast switching.1.3 Applications Portable appliances Notebook computers
si4800dy.pdf
Si4800DYVishay SiliconixN-Channel Reducded Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0185 @ VGS = 10 V 930300.033 @ VGS = 4.5 V 7D D D DSO-8SD1 8S D2 7GSD3 6G D N-Channel MOSFET4 5Top ViewOrdering Information: Si4800DYSi4800DY-T1 (with Tape and Reel)S S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 2SJ191
History: 2SJ191
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918