SI4800BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0185 at VGS = 10 V 9 30 TrenchFET Power MOSFET 0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top Vi

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0185 at VGS = 10 V 9 30 TrenchFET Power MOSFET 0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top Vi

SI4800 N-channel TrenchMOS logic level FET M3D315 Rev. 02 17 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low gate charge Surface mounted package Low on-state resistance Fast switching. 1.3 Applications Portable appliances Notebook computers

Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 30 30 0.033 @ VGS = 4.5 V 7 D D D D SO-8 SD 1 8 S D 2 7 G SD 3 6 G D N-Channel MOSFET 4 5 Top View Ordering Information Si4800DY Si4800DY-T1 (with Tape and Reel) S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Paramet