SI4800BDY Datasheet and Replacement

Si4800BDYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0185 at VGS = 10 V 930 TrenchFET Power MOSFET0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5GTop Vi

Si4800BDYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0185 at VGS = 10 V 930 TrenchFET Power MOSFET0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5GTop Vi

SI4800N-channel TrenchMOS logic level FETM3D315Rev. 02 17 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low gate charge Surface mounted package Low on-state resistance Fast switching.1.3 Applications Portable appliances Notebook computers

Si4800DYVishay SiliconixN-Channel Reducded Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0185 @ VGS = 10 V 930300.033 @ VGS = 4.5 V 7D D D DSO-8SD1 8S D2 7GSD3 6G D N-Channel MOSFET4 5Top ViewOrdering Information: Si4800DYSi4800DY-T1 (with Tape and Reel)S S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet