SI4812BDY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI4812BDY  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: SO-8

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SI4812BDY datasheet

 ..1. Size:249K  vishay
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SI4812BDY

Si4812BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.016 at VGS = 10 V 9.5 30 LITTLE FOOT Plus Power MOSFET 0.021 at VGS = 4.5 V 7.7 100 % Rg Tested SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) IF (A) Diode Forward Voltage 30 0.

 8.1. Size:64K  vishay
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SI4812BDY

Si4812DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested 0.018 @ VGS = 10 V 9 30 30 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 1.4 D SO-8 SD 1 8 Ordering Information S D 2 7 Si4

 9.1. Size:261K  vishay
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SI4812BDY

Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a

 9.2. Size:259K  vishay
si4816bd.pdf pdf_icon

SI4812BDY

Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a

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