SI4812BDY - Даташиты. Аналоги. Основные параметры

Si4812BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.016 at VGS = 10 V 9.5 30 LITTLE FOOT Plus Power MOSFET 0.021 at VGS = 4.5 V 7.7 100 % Rg Tested SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) IF (A) Diode Forward Voltage 30 0.

Si4812DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested 0.018 @ VGS = 10 V 9 30 30 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 1.4 D SO-8 SD 1 8 Ordering Information S D 2 7 Si4

Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a

Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a

Si4818DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 6.3 LITTLE FOOT Plus Channel-1 0.030 at VGS = 4.5 V 5.4 Compliant to RoHS directive 2002/95/EC 30 0.0155 at VGS = 10 V 9.5 Channel-2 0.0205 at VGS = 4.5

Si4814DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Integrated Schottky D Alternative Pinning for Additional Layout 0.021 @ VGS = 10 V 7.0 Channel 1 Channel-1 Options 0.0325 @ VGS = 4.5 V 5.6 30 30 D 100% Rg Tested 0.020 @ VGS = 10 V 7.4 Channel 2 Channel-2 APPLICATIONS 0.0265 @

Specification Comparison Vishay Siliconix Si4810BDY vs. Si4810DY Description N-Channel, 30 V (D-S) MOSFET with Schottky Diode Package SOIC-8 Pin Out Identical Part Number Replacements Si4810BDY Replaces Si4810DY Si4810BDY-E3 (Lead (Pb)-free version) Replaces Si4810DY Si4810BDY-T1 Replaces Si4810DY-T1 Si4810BDY-T1-E3 (Lead (Pb)-free version) Replaces Si4810DY-T1 ABSOLUTE MAXIMUM R

Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 6.3 LITTLE FOOT Plus Power MOSFET Channel-1 0.030 at VGS = 4.5 V 5.4 100 % Rg Tested 30 0.013 at VGS = 10 V 10 Compliant to RoHS Directive 2002/95/EC

Si4810DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 30 30 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A 4.0 D D D D SO-8 SD 1 8 S D Ordering Information 2 7 SD 3 6 Si4810DY G Si4810DY-T1 (with Tape and Reel) G D 4

Si4810BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( )ID (A) Pb-free Fast Switching Speed 0.0135 at VGS = 10 V 10 Available 30 Low Gate Charge 0.020 at VGS = 4.5 V 8 RoHS* 100 % UIS and Rg Tested COMPLIANT SCHOTTKY PRODUCT SUMMARY APPLICATIONS Diode For

Si4814BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.018 at VGS = 10 V 10 LITTLE FOOT Plus Integrated Schottky Channel-1 6.6 0.023 at VGS = 4.5 V 8.5 100 % Rg Tested 30 0.018 at VGS = 10 V 10.5 Channel-2 8.9 APP