SI4830CDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI4830CDY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 8 nC
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 155 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET SI4830CDY
SI4830CDY Datasheet (PDF)
si4830cdy.pdf
Si4830CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.020 at VGS = 10 V 8.0 LITTLE FOOT Plus SchottkyChannel-1 30 7.3 PWM Optimized0.025 at VGS = 4.5 V 8.0 100 % Rg Tested0.020 at VGS = 10 V 8.0Channel-2 30 7
si4830cd.pdf
Si4830CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.020 at VGS = 10 V 8.0 LITTLE FOOT Plus SchottkyChannel-1 30 7.3 PWM Optimized0.025 at VGS = 4.5 V 8.0 100 % Rg Tested0.020 at VGS = 10 V 8.0Channel-2 30 7
si4830ad.pdf
Si4830ADYVishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 7.5 LITTLE FOOT Plus Schottky300.030 at VGS = 4.5 V 6.5 Si4830DY Pin Compatible PWM Optimized 100 % Rg TestedSCHOTTKY PRODUCT SUMMARY Comp
si4830ady.pdf
Si4830ADYVishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus SchottkyVDS (V) rDS(on) ()ID (A) Si4830DY Pin Compatible0.022 at VGS = 10 V 7.5 PWM Optimized RoHS300.030 at VGS = 4.5 V 6.5 COMPLIANT 100 % Rg TestedSCHOTTKY PRODUCT SUMMARY VSD (V) APPLICATIONSVDS (V) IF (A)Diode Forward Vo
si4830dy.pdf
Si4830DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodePRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 7.530300.030 @ VGS = 4.5 V 6.5SCHOTTKY PRODUCT SUMMARYVSD (V)VDS (V) Diode Forward Voltage IF (A)30 0.50 V @ 1.0 A 2.0D1 D1D2 D2SO-8S1 1 D18G1 2 D17Schottky DiodeG1G2S2 3 D26G2 4 D25Top ViewS1Ordering In
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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