SI4830CDY Todos los transistores

 

SI4830CDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI4830CDY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 8 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SO-8

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SI4830CDY Datasheet (PDF)

 ..1. Size:275K  vishay
si4830cdy.pdf

SI4830CDY
SI4830CDY

Si4830CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.020 at VGS = 10 V 8.0 LITTLE FOOT Plus SchottkyChannel-1 30 7.3 PWM Optimized0.025 at VGS = 4.5 V 8.0 100 % Rg Tested0.020 at VGS = 10 V 8.0Channel-2 30 7

 6.1. Size:274K  vishay
si4830cd.pdf

SI4830CDY
SI4830CDY

Si4830CDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.020 at VGS = 10 V 8.0 LITTLE FOOT Plus SchottkyChannel-1 30 7.3 PWM Optimized0.025 at VGS = 4.5 V 8.0 100 % Rg Tested0.020 at VGS = 10 V 8.0Channel-2 30 7

 8.1. Size:254K  vishay
si4830ad.pdf

SI4830CDY
SI4830CDY

Si4830ADYVishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 7.5 LITTLE FOOT Plus Schottky300.030 at VGS = 4.5 V 6.5 Si4830DY Pin Compatible PWM Optimized 100 % Rg TestedSCHOTTKY PRODUCT SUMMARY Comp

 8.2. Size:107K  vishay
si4830ady.pdf

SI4830CDY
SI4830CDY

Si4830ADYVishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus SchottkyVDS (V) rDS(on) ()ID (A) Si4830DY Pin Compatible0.022 at VGS = 10 V 7.5 PWM Optimized RoHS300.030 at VGS = 4.5 V 6.5 COMPLIANT 100 % Rg TestedSCHOTTKY PRODUCT SUMMARY VSD (V) APPLICATIONSVDS (V) IF (A)Diode Forward Vo

 8.3. Size:71K  vishay
si4830dy.pdf

SI4830CDY
SI4830CDY

Si4830DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodePRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 7.530300.030 @ VGS = 4.5 V 6.5SCHOTTKY PRODUCT SUMMARYVSD (V)VDS (V) Diode Forward Voltage IF (A)30 0.50 V @ 1.0 A 2.0D1 D1D2 D2SO-8S1 1 D18G1 2 D17Schottky DiodeG1G2S2 3 D26G2 4 D25Top ViewS1Ordering In

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