SI4840DY Todos los transistores

 

SI4840DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI4840DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SO-8

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SI4840DY Datasheet (PDF)

 ..1. Size:244K  vishay
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SI4840DY

Si4840DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.009 at VGS = 10 V 14 TrenchFET Power MOSFET 40 0.012 at VGS = 4.5 V 12 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D S D 1 8 2 7 S D S 3 6 D G 4 5 G D Top View S Order

 0.1. Size:859K  cn vbsemi
si4840dy-t1-e3.pdf pdf_icon

SI4840DY

SI4840DY-T1-E3 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchron

 8.1. Size:238K  vishay
si4840bdy.pdf pdf_icon

SI4840DY

Si4840BDY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 19 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronou

 8.2. Size:235K  vishay
si4840bd.pdf pdf_icon

SI4840DY

Si4840BDY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 19 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronou

Otros transistores... SI4831BDY , SI4833ADY , SI4833BDY , SI4835DDY , SI4836DY , SI4838BDY , SI4838DY , SI4840BDY , 4435 , SI4842BDY , SI4848DY , SI4850EY , SI4858DY , SI4860DY , SI4862DY , SI4864DY , SI4866BDY .

 

 
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