SI4842BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4842BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0042 at VGS = 10 V 28 TrenchFET Power MOSFETs 30 29 nC 100 % Rg Tested 0.0057 at VGS = 4.5 V 24 SO-8 D SD 1 8 SD 2 7 SD 3 6 GD G 4 5 Top View S Ordering Information Si4842

Si4842DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) ( ) ID (A) D TrenchFETr Power MOSFET D 100% Rg Tested 0.0045 @ VGS =10V 23 30 30 0.006 @ VGS =4.5 V 19 D SO-8 SD 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View Ordering Information Si4842DY S Si4842DY-T1 (with Tape and Reel) Si4842DY E3 (Lead (Pb)-Free) N-Channel MOSFET Si4842DY-

Si4840BDY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 19 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronou

Si4840DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.009 at VGS = 10 V 14 TrenchFET Power MOSFET 40 0.012 at VGS = 4.5 V 12 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D S D 1 8 2 7 S D S 3 6 D G 4 5 G D Top View S Order

Si4840BDY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 19 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronou

Si4848DY Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.085 at VGS = 10 V 3.7 TrenchFET Power MOSFETs 150 0.095 at VGS = 6.0 V 3.5 Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information

Si4848ADY www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES SO-8 Single D ThunderFET power MOSFET D 5 D 6 100 % Rg tested D 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS D G 3 3 DC/DC converters S S 2 2 S S 1 1 Boost converters S Top View LED backlighti

SI4848DY-T1 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS

SI4848DY-T1-E3 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATION

SI4840DY-T1-E3 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchron