SI4842BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4842BDY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 635 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: SO-8

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SI4842BDY Datasheet (PDF)

..1. Size:240K vishay
si4842bdy.pdf

Si4842BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0042 at VGS = 10 V 28 TrenchFET Power MOSFETs30 29 nC 100 % Rg Tested0.0057 at VGS = 4.5 V 24SO-8 DSD1 8 SD2 7 SD3 6 GD G4 5 Top View SOrdering Information: Si4842

8.1. Size:84K vishay
si4842dy.pdf

Si4842DYVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) () ID (A)D TrenchFETr Power MOSFETD 100% Rg Tested0.0045 @ VGS =10V 2330300.006 @ VGS =4.5 V 19DSO-8SD1 8SD2 7SD3 6GD4 5 GTop ViewOrdering Information: Si4842DYSSi4842DY-T1 (with Tape and Reel)Si4842DYE3 (Lead (Pb)-Free)N-Channel MOSFETSi4842DY-

9.1. Size:238K vishay
si4840bdy.pdf

Si4840BDYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET1940 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronou

9.2. Size:244K vishay
si4840dy.pdf

Si4840DYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.009 at VGS = 10 V 14 TrenchFET Power MOSFET400.012 at VGS = 4.5 V 12 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8DS D1 82 7S DS 3 6 DG4 5G DTop ViewSOrder

9.3. Size:235K vishay
si4840bd.pdf

9.4. Size:241K vishay
si4848dy.pdf

Si4848DYVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.085 at VGS = 10 V 3.7 TrenchFET Power MOSFETs1500.095 at VGS = 6.0 V 3.5 Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2 7GS D3 6G D4 5Top ViewSOrdering Information:

9.5. Size:238K vishay
si4848ady.pdf

Si4848ADYwww.vishay.comVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESSO-8 SingleD ThunderFET power MOSFETD 5D 6 100 % Rg testedD 7 Material categorization:8for definitions of compliance please seewww.vishay.com/doc?999124APPLICATIONSDG33 DC/DC convertersSS22SS11 Boost converters STop View LED backlighti

9.6. Size:845K cn vbsemi
si4848dy-t1.pdf

SI4848DY-T1www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS

9.7. Size:818K cn vbsemi
si4848dy-t1-e3.pdf

SI4848DY-T1-E3www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATION

9.8. Size:859K cn vbsemi
si4840dy-t1-e3.pdf

SI4840DY-T1-E3www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchron

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