Справочник MOSFET. SI4842BDY

 

SI4842BDY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI4842BDY
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 3 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 28 nC
   Время нарастания (tr): 190 ns
   Выходная емкость (Cd): 635 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0042 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SI4842BDY

 

 

SI4842BDY Datasheet (PDF)

 ..1. Size:240K  vishay
si4842bdy.pdf

SI4842BDY
SI4842BDY

Si4842BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0042 at VGS = 10 V 28 TrenchFET Power MOSFETs30 29 nC 100 % Rg Tested0.0057 at VGS = 4.5 V 24SO-8 DSD1 8 SD2 7 SD3 6 GD G4 5 Top View SOrdering Information: Si4842

 8.1. Size:84K  vishay
si4842dy.pdf

SI4842BDY
SI4842BDY

Si4842DYVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) rDS(on) () ID (A)D TrenchFETr Power MOSFETD 100% Rg Tested0.0045 @ VGS =10V 2330300.006 @ VGS =4.5 V 19DSO-8SD1 8SD2 7SD3 6GD4 5 GTop ViewOrdering Information: Si4842DYSSi4842DY-T1 (with Tape and Reel)Si4842DYE3 (Lead (Pb)-Free)N-Channel MOSFETSi4842DY-

 9.1. Size:238K  vishay
si4840bdy.pdf

SI4842BDY
SI4842BDY

Si4840BDYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET1940 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronou

 9.2. Size:244K  vishay
si4840dy.pdf

SI4842BDY
SI4842BDY

Si4840DYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.009 at VGS = 10 V 14 TrenchFET Power MOSFET400.012 at VGS = 4.5 V 12 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8DS D1 82 7S DS 3 6 DG4 5G DTop ViewSOrder

 9.3. Size:235K  vishay
si4840bd.pdf

SI4842BDY
SI4842BDY

Si4840BDYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET1940 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronou

 9.4. Size:241K  vishay
si4848dy.pdf

SI4842BDY
SI4842BDY

Si4848DYVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.085 at VGS = 10 V 3.7 TrenchFET Power MOSFETs1500.095 at VGS = 6.0 V 3.5 Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2 7GS D3 6G D4 5Top ViewSOrdering Information:

 9.5. Size:238K  vishay
si4848ady.pdf

SI4842BDY
SI4842BDY

Si4848ADYwww.vishay.comVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESSO-8 SingleD ThunderFET power MOSFETD 5D 6 100 % Rg testedD 7 Material categorization:8for definitions of compliance please seewww.vishay.com/doc?999124APPLICATIONSDG33 DC/DC convertersSS22SS11 Boost converters STop View LED backlighti

 9.6. Size:845K  cn vbsemi
si4848dy-t1.pdf

SI4842BDY
SI4842BDY

SI4848DY-T1www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS

 9.7. Size:818K  cn vbsemi
si4848dy-t1-e3.pdf

SI4842BDY
SI4842BDY

SI4848DY-T1-E3www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATION

 9.8. Size:859K  cn vbsemi
si4840dy-t1-e3.pdf

SI4842BDY
SI4842BDY

SI4840DY-T1-E3www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchron

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