SI4866DY Todos los transistores

 

SI4866DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI4866DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: SO-8

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SI4866DY Datasheet (PDF)

 ..1. Size:224K  vishay
 si4866dy.pdf pdf_icon

SI4866DY

Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0055 at VGS = 4.5 V 17 TrenchFET Power MOSFETs 12 0.008 at VGS = 2.5 V 14 PWM Optimized for High Efficiency Low Output Voltage 100 % Rg Tested APPLICATIONS Synchronous

 8.1. Size:235K  vishay
 si4866bdy.pdf pdf_icon

SI4866DY

Si4866BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0053 at VGS = 4.5 V 21.5 TrenchFET Power MOSFET 0.006 at VGS = 2.5 V 12 20.2 29.5 nC 100 % Rg and UIS Tested 0.0074 at VGS = 1.8 V 18.2 APPLICATIONS Synchronous Rectifier Poi

 8.2. Size:232K  vishay
 si4866bd.pdf pdf_icon

SI4866DY

Si4866BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0053 at VGS = 4.5 V 21.5 TrenchFET Power MOSFET 0.006 at VGS = 2.5 V 12 20.2 29.5 nC 100 % Rg and UIS Tested 0.0074 at VGS = 1.8 V 18.2 APPLICATIONS Synchronous Rectifier Poi

 9.1. Size:224K  vishay
 si4862dy.pdf pdf_icon

SI4866DY

Si4862DY Vishay Siliconix N-Channel 16-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0033 at VGS = 4.5 V 25 TrenchFET Power MOSFETs 2.5 V Rated 16 0.0055 at VGS = 2.5 V 20 Low 3.3 m RDS(on) Low Gate Resistance 100 % Rg Tested APPLICATIONS Synchronous Rectification

MOSTRAR MÁS

Otros transistores... SI4842BDY , SI4848DY , SI4850EY , SI4858DY , SI4860DY , SI4862DY , SI4864DY , SI4866BDY , IRFB3607 , SI4874BDY , SI4880DY , SI4884BDY , SI4886DY , SI4888DY , SI4890BDY , SI4890DY , SI4892DY .

 

 
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